X-On Electronics has gained recognition as a prominent supplier of INDUFETT MOS2 across the USA, India, Europe, Australia, and various other global locations. INDUFETT MOS2 are a product manufactured by PRF. We provide cost-effective solutions for INDUFETT MOS2, ensuring timely deliveries around the world.

INDUFETT MOS2 PRF

INDUFETT MOS2 electronic component of PRF
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Part No.INDUFETT MOS2
Manufacturer: PRF
Category: Unclassified
Description: Grease; spray; Ingredients: molybdenum disulfide; can; 400ml
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.9921 ea
Line Total: USD 17.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 17.9921
3 : USD 17.0192
6 : USD 15.7849

   
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We are delighted to provide the INDUFETT MOS2 from our PRF manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the INDUFETT MOS2 and other electronic components in the PRF manufacturer and beyond.

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ET The INDUFETT MOS2 part of the PRFET is a type of insulated-gate field-effect transistor (FET) that has an insulated gate structure, meaning that the gate of the transistor is insulated from the rest of the structure. This type of FET is designed to be used in applications where high current and high voltage are required, such as power semiconductor devices. This type of device uses a multilayer gate oxide structure to help reduce the gate-drain capacitance, increasing the device’s frequency response and enabling higher power operation. This makes it well-suited for use in high-speed switching applications and power amplifiers. Additionally, the higher gate breakdown voltage produced by a MOS2 PRFET allows it to be used in a variety of high-voltage applications.

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