PE42424 Document Category: Product Specification UltraCMOS SPDT RF Switch, 100 MHz8.5 GHz Features Figure 1 PE42424 Functional Diagram 802.11 a/b/g/n/ac/ax, Wi-Fi 6E and ultra-wideband RFC (UWB) support Exceptional isolation 48 dB 2.4 GHz 35 dB 5.8 GHz RF 1 RF 2 Fast switching ESD ESD 145 ns switching time 125 kHz switching rate High power handling CMOS Control Driver and ESD 39 dBm pulsed 30 dBm CW High linearity across supply range V1 IIP3 of 61 dBm DOC-02108 IIP2 of 125 dBm 1.8V control logic compatible 105 C operating temperature ESD performance 2500V HBM on RF pins to GND Packaging 6-lead 1.5 1.5 mm DFN Product Description The PE42424 is a HaRP technology-enhanced reflective 50 SPDT RF switch designed for use in high power and high performance WLAN 802.11 a/b/g/n/ac/ax and Wi-Fi 6E applications such as carrier and enterprise Wi- Fi products and UWB applications supporting bandwidths up to 8.5 GHz. This switch features exceptional port-to-port isolation, fast switching speed, and high power handling, all in a compact 1.5 1.5 mm package. PE42424 also features high linearity that remains invariant over the full power supply range. In addition, this device has robust ESD and temperature performance and does not require blocking capacitors or any external matching components. The PE42424 is manufactured on pSemis UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemis HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 20152020, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-44114-6 (11/2020) www.psemi.com ESDPE42424 UltraCMOS SPDT RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42424 Parameter/Condition Symbol Min Max Unit V Supply voltage 0.3 5.5 V DD V Digital input (V1) 0.3 3.6 V CTRL P RF input power, 1006000 MHz 41 dBm MAX,ABS P RF input power, 60008500 MHz 40 dBm MAX,ABS T Storage temperature range 65 150 C ST (1) ESD voltage HBM V 1000 V All pins ESD,HBM 2500 V RF pins to GND (2) V 1000 V ESD voltage CDM, all pins ESD,MM Notes: 1) Human body model (MIL-STD 883 Method 3015) 2) Charged device model (JEDEC JESD22-C101) Page 2 of 14 DOC-44114-6 (11/2020) www.psemi.com