Product Specification PE42820 UltraCMOS SPDT RF Switch 302700 MHz Product Description Features The PE42820 is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in High power handling mobile radio, relay replacement and other high 45 dBm 850 MHz, 32W performance wireless applications. 44 dBm 2 GHz, 25W Exceptional linearity This switch is a pin-compatible upgraded version of the 85 dBm IIP3 850 MHz PE42510A with a wider frequency and power supply 81 dBm IIP3 2.7 GHz range, and external negative supply option. It maintains exceptional linearity and power handling from 30 MHz Low insertion loss through 2.7 GHz. PE42820 also features low insertion 0.25 dB 850 MHz loss, high power handling, and is offered in a 32-lead 0.40 dB 2 GHz 5 5 mm QFN package. In addition, no external blocking Wide supply range of 2.35.5V capacitors are required if 0 VDC is present on the RF +1.8V control logic compatible ports. ESD performance 1.5 kV HBM on all pins The PE42820 is manufactured on PSemis UltraCMOS process, a patented variation of silicon-on-insulator (SOI) External negative supply option technology on a sapphire substrate. PSemis HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 2. Package Type 32-lead 5 5 mm QFN Figure 1. Functional Diagram RFC RF1 RF2 ESD ESD CMOS Control/ Driver and ESD DOC-52312 V V1 VSS DD EXT Document No. DOC-94660-1 www.psemi.com 2019 pSemi Corp. All rights reserved. Page 1 of 12 ESDPE42820 Product Specification Table 1. Electrical Specifications +25 C (Z = Z = 50), unless otherwise noted S L 1 2 Normal mode : V = 3.3V, V = 0V or Bypass mode : V = 3.3V, V = 3.3V DD SS EXT DD SS EXT Parameter Path Condition Min Typ Max Unit 30 MHz1 GHz 0.30 0.45 dB 3 Insertion loss RFCRFX 12 GHz 0.40 0.60 dB 0.70 0.95 dB 22.7 GHz 34 35 dB 30 MHz1 GHz 27 28 dB Isolation RFXRFX 12 GHz 22.7 GHz 23 24 dB Unbiased isolation RFCRFX V , V1 = 0V, +27 dBm 6 dB DD 22 dB 30 MHz1 GHz 3 20 dB Return loss RFX 12 GHz 14 dB 22.7 GHz 94 90 dBc 2fo: +45 dBm pulsed 1GHz, 50 Harmonics RFCRFX 3fo: +45 dBm pulsed 1GHz, 50 84 80 dBc 85 dBm 850 MHz Input IP3 RFCRFX 2700 MHz 81 dBm 30 MHz2 GHz 45.5 dBm 4 Input 0.1dB compression point RFCRFX 22.7 GHz 44.5 dBm Switching time 50% CTRL to 90% or 10% RF 15 25 s 5 Settling time 50% CTRL to harmonics within specifications 30 45 s Notes: 1. Normal mode: single external positive supply used. 2. Bypass mode: both external positive supply and external negative supply used. 3. Performance specified with external matching. Refer to Evaluation Kit section for additional information. 4. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the operating RF input power (50). 5. See harmonics specs above. 2019 pSemi Corp. All rights reserved. Document No. DOC-94660-1 UltraCMOS RFIC Solutions Page 2 of 12