FMS2031-001 10W GaAs Wideband SPDT Switch FMS2031-001 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide High Isolation: 36dB Typ. at antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process 3.5GHz technology, which offers leading edge performance optimized for switch applica- Low Insertion Loss: 0.5dB tions. The FMS2031-001 is designed for use in WiMax, L-, S-, and C-band wireless Typ. at 2.5GHz applications and WLAN access points where high linearity switching is required. Low Insertion Loss: 0.96dB Typ. at 6GHz P 42dBm at 5GHz 1dB ANT Optimum Technology Operates from a Single Posi- Matching Applied tive Voltage GaAs HBT V1 V2 Less than 10 A Control Cur- GaAs MESFET rent at 35dBm Input Power InGaP HBT SiGe BiCMOS Applications RF1 RF2 Si BiCMOS SiGe HBT WiMax GaAs pHEMT 9 L-, S-, and C-band Digital Cel- Si CMOS lular Si BJT WLAN Applications GaN HEMT InP HBT RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. T =25C, V =0V/2.7V, Z =Z =50 Electrical Specifications AMBIENT CTRL IN OUT Insertion Loss 0.5 0.6 dB 2.3GHz to 2.7GHz 0.55 0.7 dB 3.3GHz to 3.8GHz 0.9 dB 4.9GHz to 5.9GHz Return Loss 27.5 dB 2.3GHz to 2.7GHz 21.5 dB 3.3GHz to 3.8GHz TBD dB 4.9GHz to 5.9GHz Isolation 30 32.5 dB 2.3GHz to 2.7GHz 30 35 dB 3.3GHz to 3.8GHz 23 dB 4.9GHz to 5.9GHz P at 0.1dB Compression Point 39.5 dBm 2.3GHz to 2.7GHz IN 38.5 dBm 3.3GHz to 3.8GHz 38 dBm 4.9GHz to 5.9GHz P at 0.5dB Compression Point 41 dBm 2.3GHz to 2.7GHz IN 41 dBm 3.3GHz to 3.8GHz 41 dBm 4.9GHz to 5.9GHz EVM (Contribution Due to Switch) 0.5 % 35dBm at 5.9GHz (OFDM WLAN 54) OIP3 65 dBm +15dBm 1980MHz, +15dBm 1940MHz Switching Speed: T , T <300 ns 10% to 90% RF and 90% to 10% RF RISE FALL Switching Speed: T , T <800 ns 50% control to 90% RF and 50% control to 10% ON OFF RF Control Current <5 10 A +35dBm RF input 0.96GHz RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical Rev A2 DS090608 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6FMS2031-001 1 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Input Power +41 dBm cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Control Voltage +6 V mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Operating Temperature -40 to 85 C RoHS status based on EUDirective2002/95/EC (at time of this document revision). Maximum Junction Temperature 125 C The information in this publication is believed to be accurate and reliable. However, no Storage Temperature -55 to 150 C responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Notes: license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- At high powers, the dissipation in the switch can be significant and the resulting cation circuitry and specifications at any time without prior notice. thermal effects need to be taken in to account. The device should be mounted with appropriate heat sinking to take this into account. The maximum allowable junction temperature is T =125 C and for the thermal JMAX calculation, the dissipation within the switch should be taken as = 5.5%. This should include the power input to the switch and anything reflected back from an external mismatch. The thermal resistance of the FET should be taken as R =70 C/W. TH T =T +P R , where T <T J OP IN TH J JMAX Truth Table Switch State VC1 VC2 ANT - RF1 ANT - RF2 A High Low Insertion loss Isolation B Low High Isolation Insertion Loss Note: External DC blocking capacitors are required on all RF ports (typ: 9pF). All unused ports terminated in 50 . High: +2.7V to +6V. Low: +0V to +0.2V. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. Rev A2 DS090608