X-On Electronics has gained recognition as a prominent supplier of RDA1005LSR RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RDA1005LSR RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RDA1005LSR Qorvo

RDA1005LSR electronic component of Qorvo
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Part No.RDA1005LSR
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 50-4000MHz 6 BIT Gain step .5dB
Datasheet: RDA1005LSR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 100
100 : USD 10.5295
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 13.8187
10 : USD 12.5038
25 : USD 11.5165
N/A

Obsolete
0
MOQ : 100
Multiples : 100
100 : USD 8.7538
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Test Frequency
Brand
Factory Pack Quantity :
Number Of Channels
Cnhts
Hts Code
Input Return Loss
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RDA1005LSR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RDA1005LSR and other electronic components in the RF Amplifier category and beyond.

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AMP RDA1005LDig- ital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 RDA1005L Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT Package: MCM, 32-Pin, 5.2mm x 5.2mm 32 31 30 29 28 27 26 25 1 24 AMPIN NC Features 2 23 GND NC 6-bit SPI Broadband 50MHz to 4000MHz 3 22 GND NC Operation 4 21 ATTOUT NC 6-Bit Digital Step Attenuator 5 20 ACG1 NC Serial Mode Programming DSA 6 19 ACG2 NC Gain = -13.5dB to +18dB (0.5dB Step Size) 7 18 ACG3 NC High OIP3/P1dB = 8 17 ACG4 Vdd +36dB/20dBm 9 10 11 12 13 14 15 16 Single +5V Supply E-pad GND Small 32-Pin, 5.2mm x 5.2mm, MCM (Footprint Compatible with Functional Block Diagram 5mm x 5mm 32-Pin QFN) Product Description Applications RFMDs RDA1005L is a digitally controlled variable gain amplifier featuring high lin- Cellular, 3G Infrastructure earity over the entire gain control range with noise figure less than 6dB in its maxi- WiBro, WiMax, LTE mum gain state. The gain of the 6-bit digital step attenuator is programmed with a serial mode control interface. The RDA1005L is packaged in a small 5.2mm x Microwave Radio 5.2mm leadless laminate MCM which contains plated through thermal vias for High Linearity Power Control ultra-low thermal resistance. The footprint for this thermal vias for ultra low thermal resistance. The footprint for this module is directly compatible with a 5mm x 5mm QFN. This module is easy to use with no external matching components required. Ordering Information RDA1005LSQ Sample bag with 25 pieces RDA1005LSR 7 Sample reel with 100 pieces RDA1005LTR7 7 Reel with 750 pieces RDA1005LTR13 13 Reel with 2500 pieces RDA1005LPCK-410 50MHz to 4000MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS120828 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 10 ACG5 GND ACG6 GND GND GND ATTIN AMPOUT GND GND NC LE PUP DATA NC CLKRDA1005L Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage +5.5 V DC Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- DC Supply Current 110 mA tions is not implied. Power Dissipation 605 mW The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max RF Input Power 20 dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Operating Temperature (T )-40 to +85 C CASE cation circuitry and specifications at any time without prior notice. Storage Temperature -40 to +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free Junction Temp 165* C per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. ESD Rating (HBM) 1000 (Class 1C) V Moisture Sensitivity Level MSL3 * MTTF = 1.0E6 hours at 165C junction temperature Specification Parameter Unit Condition Min. Typ. Max. TA = 25C, V = 5V General Parameters DD 50 4000 MHz Frequency Range Gain Max 500MHz 17.5 19.0 20.5 dB Attenuation = 0dB Gain Max 2700MHz 15.5 17.5 18.5 dB Step Accuracy +(0.1 +5% attenuation setting) dB Major state max error up to 2700MHz Output P1dB 1900MHz 20 dBm Attenuation = 0dB Output P1dB 2700MHz 19 dBm Output IP3 1900MHz 36 dBm Output IP3 2700MHz 33 dBm Control Interface 6 bit Serial mode Settling Time 250 ns tON, tOFF (10/90% RF) Noise Figure 1900MHz 6.3 dB Attenuation = 0dB Impedance 50 Input Return Loss -15 dB Output Return Loss -15 dB Supply Voltage 4.75 5.0 5.25 V Supply Current 82 mA Thermal Resistance 80.7 C/W Junction to backside of device Typical RF Performance at Key Operating Frequencies (Note: Broadband Application Circuit) Parameter Unit 500MHz 850MHz 1.95GHz 2.4GHz 3.5GHz 4GHz Maximum Small Signal Gain dB 18.9 18.7 17.6 17.2 15.7 13.7 Output P1dB dBm 20.5 20.4 20.4 19.4 16.9 14.7 Output IP3 dBm 39 40 36 34.8 28.5 27.1 Input Return Loss dB -36 -24 -16 -15 -14 -10 Output Return Loss dB -18 -22 -15 -11 -16 -27 Noise Figure dB 5.5 5.5 5.9 6.2 - - 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 10 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS120828

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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