X-On Electronics has gained recognition as a prominent supplier of RFFC5072SR RF Mixer across the USA, India, Europe, Australia, and various other global locations. RFFC5072SR RF Mixer are a product manufactured by Qorvo. We provide cost-effective solutions for RF Mixer, ensuring timely deliveries around the world.

RFFC5072SR Qorvo

RFFC5072SR electronic component of Qorvo
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Part No.RFFC5072SR
Manufacturer: Qorvo
Category: RF Mixer
Description: RF Mixer LO Freq. 85-4200MHz WB Synthesizer/VCO
Datasheet: RFFC5072SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 26.5838
25 : USD 19.3206
100 : USD 16.1181
200 : USD 14.3467
500 : USD 14.2177
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RF Frequency
NF - Noise Figure
LO Frequency
IF Frequency
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Operating Supply Voltage
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We are delighted to provide the RFFC5072SR from our RF Mixer category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFFC5072SR and other electronic components in the RF Mixer category and beyond.

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RFFC5071/5072 WIDEBAND SYNTHESIZER/VCO WITH INTEGRATED 6GHz MIXER Package: QFN, 32-Pin, 5mm x 5mm RFFC5071 RFFC5072 Features 85MHz to 4200MHz LO Frequency Range Phase Phase Fractional-N Synthesizer with Synth Synth det. det. Very Low Spurious Levels Typical Step Size 1.5Hz Fully Integrated Low Phase Noise VCO and LO Buffers Ref. Ref. Integrated Phase Noise divider divider 0.18 rms at 1GHz 0.50 rms at 3GHz High Linearity RF Mixer(s) Functional Block Diagram 30MHz to 6000MHz Mixer Frequency Range Product Description Input IP3 +23dBm The RFFC5071 and RFFC5072 are re-configurable frequency conversion devices Mixer Bias Adjustable for Low with integrated fractional-N phased locked loop (PLL) synthesizer, voltage con- Power Operation trolled oscillator (VCO) and either one or two high linearity mixers. The fractional-N Full Duplex Mode (RFFC5071) synthesizer takes advantage of an advanced sigma-delta modulator that delivers ultra-fine step sizes and low spurious products. The PLL/VCO engine combined with 2.7V to 3.3V Power Supply an external loop filter allows the user to generate local oscillator (LO) signals from Low Current Consumption 85MHz to 4200MHz. The LO signal is buffered and routed to the integrated RF mix- ers which are used to up/down-convert frequencies ranging from 30MHz to 3- or 4-Wire Serial Interface 6000MHz. The mixer bias current is programmable and can be reduced for applica- tions requiring lower power consumption. Both devices can be configured to work Applications as signal sources by bypassing the integrated mixers. Device programming is Wideband Radios achieved via a simple 3-wire serial interface. In addition, a unique programming mode allows up to four devices to be controlled from a common serial bus. This Distributed Antenna Systems eliminates the need for separate chip-select control lines between each device and Diversity Receivers the host controller. Up to six general purpose outputs are provided, which can be Software Defined Radios used to access internal signals (the LOCK signal, for example) or to control front end components. Both devices operate with a 2.7V to 3.3V power supply. Frequency Band Shifters Point-to-Point Radios WiMax/LTE Infrastructure Satellite Communications Wideband Jammers Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140110 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 26RFFC5071/5072 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Supply Voltage (V ) -0.5 to +3.6 V DD Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Input Voltage (V ) any pin -0.3 to V + 0.3 V IN DD tions is not implied. The information in this publication is believed to be accurate and reliable. However, no RF/IF mixer input power +15 dBm responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Operating Temperature Range -40 to +85 C license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Storage Temperature Range -65 to +150 C cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Specification Parameter Unit Condition Min. Typ. Max. ESD Requirements Human Body Model 2000 V DC Pins 1500 V All Pins Charge Device Model 500 V All Pins Operating Conditions Supply voltage (V) 2.73.03.3V DD Temperature (T ) -40 +85 C OP Logic Inputs/Outputs (V = Supply to DIG VDD pin) DD Input low voltage -0.3 +0.5 V Input high voltage V / 1.5 V V DD DD Input low current -10 +10 AInput = 0V Input high current -10 +10 AInput = V DD Output low voltage 0 0.2*V V DD Output high voltage 0.8*V V V DD DD Load resistance 10 k Load capacitance 20 pF GPO Drive Capability Sink Current 20 mA At V = +0.6V OL Source Current 20 mA At V = +2.4V OL Output Impedance 25 Static Supply Current (I ) with 1GHz LO 100 mA Low current, MIX IDD=1, one mixer enabled. DD 125 mA High linearity, MIX IDD=6, one mixer enabled. Standby 2 mA Reference oscillator and bandgap only. Power Down Current 300 A ENBL=0 and REF STBY=0 Mixer 1/2 (Mixer output driving 4:1 balun) Gain -2 dB Not including balun losses Noise Figure <3000MHz 10 dB Low current setting 13 dB High linearity setting Noise Figure <4000MHz 11 dB Low current setting 15 dB High linearity setting 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 26 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS140110

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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