SGA4186ZDC to 5000MHz, Cascadable SiGe HBT MMIC Ampli- fier SGA4186Z DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features The SGA4186Z is a high performance SiGe HBT MMIC Amplifier. A Darling- Broadband Operation: DC to 5000MHz ton configuration featuring one-micron emitters provides high F and T excellent thermal performance. The heterojunction increases breakdown Cascadable 50 voltage and minimizes leakage current between junctions. Cancellation of Operates from Single Supply emitter junction non-linearities results in higher suppression of intermodu- lation products. Only two DC-blocking capacitors, a bias resistor, and an Low Thermal Resistance Package optional RF choke are required for operation. Applications Optimum Technology Matching Applied Gain & Return Loss vs. Frequency PA Driver Amplifier V = 3.2 V, I = 45 mA (Typ.) D D GaAs HBT Cellular, PCS, GSM, UMTS 16 0 GaAs MESFET IF Amplifier InGaP HBT 12 -10 GAIN Wireless Data, Satellite SiGe BiCMOS 8 -20 Si BiCMOS IRL SiGe HBT ORL 4 -30 GaAs pHEMT Si CMOS 0 -40 01 2 3 45 Si BJT T =+25C L Frequency (GHz) GaN HEMT RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 9.0 10.0 11.0 dB 850MHz 9.2 dB 1950MHz 8.9 dB 2400MHz Output Power at 1dB Compression 14.6 dBm 850MHz 12.4 dBm 1950MHz Output Third Intercept Point 28.3 dBm 850MHz 25.5 dBm 1950MHz Bandwidth Determined by Return 5000 MHz >10dB Loss Input Return Loss 20.3 dB 1950MHz Output Return Loss 24.4 dB 1950MHz Noise Figure 5.0 dB 1950MHz Device Operating Voltage 2.9 3.2 3.5 V Device Operating Current 41 45 49 mA Thermal Resistance 97 C/W (Junction - Lead) Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, R =110, T =25C, Z =Z =50 S D 3 OUT BIAS L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS20151204 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6 NOT FOR NEW DESIGNS Gain (dB) Return Loss (dB)SGA4186Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I)90 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Max Device Voltage (V)5 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Max RF Input Power +18 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Junction Temp (T)+150 C J The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Storage Temp +150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l D D J L TH Typical Performance at Key Operating Frequencies Parameter Unit 100 500 850 1950 2400 3500 MHz MHz MHz MHz MHz MHz Small Signal Gain dB 10.5 10.4 10.0 9.2 8.9 8.1 Output Third Order Intercept Point dBm 29.3 28.3 25.5 24.1 Output Power at 1dB Compression dBm 13.6 14.6 12.4 11.3 Input Return Loss dB 23.6 25.6 16.2 20.3 22.7 11.7 Output Return Loss dB 15.6 20.4 14.8 24.4 24.1 21.7 Reverse Isolation dB 15.8 16.0 16.5 17.9 18.2 19.2 Noise Figure dB 4.6 4.7 5.0 5.3 Test Conditions: V =8V, I =45mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, R =110, T =25C, Z =Z =50 S D 3 OUT BIAS L S L OIP vs. Frequency P vs. Frequency 3 1dB V =3.2 V, I = 45 mA (Typ.) V = 3.2 V, I = 45 mA (Typ.) D D D D 35 18 30 15 25 12 20 9 T =+25C T =+25C L L 15 6 00.5 11.5 22.5 3 00.5 11.5 22.5 3 Frequency (GHz) Frequency (GHz) Noise Figure vs. Frequency V = 3.2 V, I = 45 mA (Typ.) D D 7 6 5 4 3 T =+25C L 2 00.5 11.5 22.5 3 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. NOT FOR NEW DESIGNS OIP (dBm) 3 Noise Figure (dB) P (dBm) 1dB