SGC2363Z 50MHz to 4000MHz Active Bias Sili- con Germa- nium SGC2363Z Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMDs SGC2363Z is a high performance SiGe HBT MMIC amplifier utiliz- Single, Fixed 3V Supply ing a Darlington configuration with a patented active-bias network. The No Dropping Resistor active bias network provides stable current over temperature and process Required Beta variations. Designed to run directly from a 3V supply, the SGC2363Z Patented Self-Bias Circuitry does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block P =10.1dBm at 1950MHz 1dB applications that require small size and minimal external components. It is OIP =23dBm at 1950MHz internally matched to 50 . 3 Robust 1000V ESD, Class 1C Optimum Technology Matching Applied HBM Gain & Return Loss V = 3V, I = 26mA D D 30 GaAs HBT Applications S21 20 GaAs MESFET PA Driver Amplifier InGaP HBT 10 SiGe BiCMOS Cellular, PCS, GSM, UMTS, Bias Tee Data, Z = Z = 50 Ohms, T = 25C S L L WCDMA 0 Si BiCMOS SiGe HBT IF Amplifier -10 S22 GaAs pHEMT Wireless Data, Satellite -20 Si CMOS S11 Si BJT -30 0 0.5 1 1.5 2 2.5 3 3.5 4 GaN HEMT Frequency (GHz) RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 15.5 17.0 18.5 dB 850MHz 11.6 13.1 14.6 dB 1950MHz 12.3 dB 2400MHz Output Power at 1dB Compression 10.4 dBm 850MHz 9.1 10.1 dBm 1950MHz 9.6 dBm 2400MHz Output Third Order Intercept Point 23.0 dBm 850MHz 21.0 23.0 dBm 1950MHz 24.0 dBm 2400MHz Input Return Loss 12.0 15.0 dB 1950MHz Output Return Loss 10.5 14.5 dB 1950MHz Noise Figure 3.7 4.8 dB 1930MHz Thermal Resistance 255 C/W junction - lead Device Operating Voltage 3.0 V Device Operating Current 22.0 26.0 30.0 mA Test Conditions: V =3V, I =26mA Typ., OIP Tone Spacing=1MHz, P per tone=-5dBm, T =25C, Z =Z =50 D D 3 OUT L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111011 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6 Gain, RL (dB)SGC2363Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Device Current (I)55 mA cause permanent damage to the device. Extended application of Absolute Maximum CE Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)4 V CE tions is not implied. RF Input Power* (See Note) 12 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Junction Temp (T)+150 C J infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. Storage Temp +150 C RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric ESD Rating - Human Body Model Class 1C materials and red phosphorus as a flame retardant, and <2% antimony in (HBM) solder. Moisture Sensitivity Level MSL 1 *Note: Load condition Z =50 . L Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance with Application Circuit at Key Operating Frequencies Parameter Unit 100 500 850 1950 2400 3500 MHz MHz MHz MHz MHz MHz Small Signal Gain (G) dB 18.4 18.1 17.0 13.1 12.3 9.8 Output Third Order Intercept Point (OIP ) dBm 23.0 23.5 23.0 23.0 24.0 22.0 3 Output Power at 1dB Compression (P ) dBm 12.1 11.0 10.4 10.1 9.6 8.3 1dB Input Return Loss (IRL) dB 23.5 19.0 18.0 15.0 16.5 14.0 Output Return Loss (ORL) dB 22.5 18.5 16.5 14.5 13.0 12.5 Reverse Isolation (S ) dB 20.5 21.5 22.0 20.5 20.0 19.0 12 Noise Figure (NF) dB 2.9 3.0 3.3 3.7 3.9 4.7 Test Conditions: V =3V I =26mA Typ. OIP Tone Spacing=1MHz, P per tone=-5dBm D D 3 OUT T =25C Z =Z =50 L S L Typical Performance with Bias Tee, V =3V, I =26mA D D OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing) P1dB vs. Frequency 15 28 13 26 11 24 9 22 25C 25C -40C 7 -40C 20 85C 85C 5 18 00.5 11.522.5 33.5 00.5 11.5 22.5 3 3.5 Frequency (GHz) Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111011 OIP3 (dBm) P1dB (dBm)