X-On Electronics has gained recognition as a prominent supplier of TQM713024 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TQM713024 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TQM713024 Qorvo

TQM713024 electronic component of Qorvo
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Part No.TQM713024
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amp Module Single Power Amp 849MHz 4.2V 8-Pin SMD
Datasheet: TQM713024 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
68: USD 1.0024 ea
Line Total: USD 68.16 
Availability - 0
MOQ: 68  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 68
Multiples : 1
68 : USD 1.0024

   
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We are delighted to provide the TQM713024 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TQM713024 and other electronic components in the RF Amplifier category and beyond.

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TQM713024 Advance Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Features Functional Block Diagram InGaP HBT Technology VVcc1cc1 VVcc2cc2 High Efficiency: 39% 28dBm Capable of running as 0-bit PA in low bias IInputnput OutOutputput mode to 28dBm RF InRF In RF OutRF Out MaMattcchh MaMattcchh Supports new chipsets with Vref 2.6V Low Leakage Current: <1uA 1s1s1sttt 2nd2nd2nd VmVmododee GNDGND SSStttageageage SSStttageageage Optimized for 50 ohm System PAPA Small 8-pin, 3x3mm module Excellent Rx band noise performance 1 bi1 bitt Bi Biasas Cont Controlrol VrVrefef GNDGND Lead-free 260C RoHS Compliant Full ESD Protection Product Description The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones. Its compact 3x3mm package makes it ideal for todays extremely small data enabled phones. Its RF performance meets the Applications requirements for IS-95/98/CDMA2000 & WCDMA Rel99 standards. IS-95/CDMA2000 The TQM713024 is designed on TriQuints advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and Single/Dual/Tri Mode CDMA/AMPS phones ruggedness. Selectable bias mode and a shutdown mode with low leakage current, improve talk and standby time. The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. The TQM713024 has robust performance into mismatch and excellent linearity Package Style margin under all operating conditions including the ability to operate in LP Mode all the way to full output power. 11 88 Electrical Specifications 22 77 Parameter Min Typ Max Units Frequency 824 849 MHz 33 66 1 CDMA mode maximum Pout 28 dBm CDMA ACPR1 ( 885kHz Offset) -50 -46 dBc 44 55 CDMA ACPR2 ( 1.98MHz Offset) -60 -56 dBc PAE 28dBm 34 39 % 8-Pin 3.0x3.0mm Plastic Module Package Top View (X-ray) Rx Band Noise -137 dBm/Hz Note 1: Test Conditions CDMA Mode: V =3.4VDC, V =3.4VDC, V =2.85VDC, Tc=25C CC1 CC2 REF 1 Advance Data Sheet: Subject to change without notice For additional information and latest specifications, see our website: www.triquint.com Revision A, July 2005 TQM713024 Advance Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Electrical Specifications 1 Absolute Maximum Ratings Parameter Symbol Min. Typ/Nom Max. Units RF Input Power PIN - 0 for HPM 10.0 dBm 2 for LPM Supply Voltage V 0 3.4 5.0 Volts CC Reference Voltage V 0 2.85 3.5 Volts REF Vmode (1 bit Bias Control) Vmode 0 - 3.5 Volts Case Operating Temperature TCASE -40 25 +100 C Storage Temperature TSTORE -55 25 +150 C Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value. Recommended Operating Conditions Parameter Symbol Min. Typ/Nom Max. Units Supply Voltage VCC 3.2 3.4 4.2 Volts Reference Voltage VREF Volts PA On 2.75 2.85 2.95 PA Off 0 - 0.5 Vmode (1 bit Bias Control) Vmode Volts High Bias Mode 0 - 0.5 Low Bias Mode 2.5 2.85 3.0 Case Operating Temperature TCASE -30 25 +85 C Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value. Power Range Truth Table Parameter VRef Vmode Range High Power 2.85 V Low 16 dBm - 28 dBm Low Power 2.85 V High < 16 dBm Shut Down 0 V Low - 2 Advance Data Sheet: Subject to change without notice For additional information and latest specifications, see our website: www.triquint.com Revision A, July 2005

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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