The AP3407S with MOSFET P Trench, manufactured by Quan Li, is a 30 V, 4.1 A, 3 V, 250uA, 60 mΩ @ 4.1A, 10V SOT23-3 RoHS-compliant electronic part. It features a four-terminal depletion-mode N-channel MOSFET in a compact SOT-23-3 package that minimizes PCB footprint. This device provides improved Rugged Surge Rating, with assured ESD performance and tight parametric control over voltage, off-state leakage current and on-state resistance. The low RDS(on) minimizes power dissipation and increases MOSFET efficiency. Additionally, the ultra low gate charge provides superior performance in motor control and other switching applications.