1H1 RECTRON SEMICONDUCTOR THRU TECHNICAL SPECIFICATION 1H8 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * Low power loss, high efficiency * Low leakage * Low forward voltage * High current capability * High speed switching R-1 * High surge capability * High reliability MECHANICAL DATA * Case: Molded plastic .025 (0.65) * Epoxy: Device has UL flammability classification 94V-O DIA. ( ) ( ) .021 0.55 .787 20.0 * Lead: MIL-STD-202E method 208C guaranteed MIN. * Mounting position: Any * Weight: 0.12 gram ( ) .126 3.2 ( ) .106 2.7 .102 (2.6) DIA. ( ) .091 2.3 ( ) .787 20.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MIN. o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 UNITS Maximum Recurrent Peak Reverse Voltage VRRM Volts 50 100 200 300 400 600 800 1000 Maximum RMS Voltage VRMS 35 Volts 70 140 210 280 420 560 700 Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts Maximum Average Forward Rectified Current IO 1.0 Amps o at TA= 25 C Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 25 Amps superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) CJ 15 12 pF 0 Operating and Storage Temperature Range TJ, TSTG -55 to + 150 C o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) CHARACTERISTICS SYMBOL UNITS 1H1 1H2 1H3 1H4 1H5 1H6 1H7 1H8 Maximum Instantaneous Forward Voltage at 1.0A DC VF 1.0 1.3 1.7 Volts Maximum DC Reverse Current 5.0 uAmps o at Rated DC Blocking Voltage TA = 25 C IR Maximum Full Load Reverse Current 100 uAmps o Average, Full Cycle .375 (9.5mm) lead length at TL = 55 C Maximum Reverse Recovery Time (Note 1) trr 50 75 nSec NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2002-10 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts 1H1~1H5 1H6~1H8 ( ) RATING AND CHARACTERISTIC CURVES 1H1 THRU 1H8 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC FIG. 2 - TYPICAL FORWARD 50 10 CURRENT DERATING CURVE trr NONINDUCTIVE NONINDUCTIVE +0.5A 2.0 ( - ) D.U.T 0 Single Phase ( + ) Half Wave 60Hz PULSE 25 Vdc Resistive or -0.25A GENERATOR Inductive Load (approx) (NOTE 2) 1.0 ( - ) 1 OSCILLOSCOPE ( + ) NON- (NOTE 1) INDUCTIVE -1.0A 1cm 0 NOTES: 1 Rise Time = 7ns max. Input Impedance = SET TIME BASE FOR 0 25 50 75 100 125 150175 1 megohm. 22pF. 10/20 ns/cm 2. Rise Time = 10ns max. Source Impedance = AMBIENT TEMPERATURE ( ) 50 ohms. FIG. 3 - TYPICAL REVERSE CHARACTERISTICS FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 10 T = 150 J 10 1.0 T = 100 J 1.0 .1 T = 25 J T = 25 J .1 .01 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 140 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 35 100 30 8.3ms Single Half Sine-Wave ( ) 60 JEDEC Method 25 40 20 20 15 10 T = 25 J 6 10 4 5 2 0 1 .1 .2 .4 1.0 2 4 10 20 40 100 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE, ( V ) RECTRON 600/800/1000V 300/400V 50/100/200V INSTANTANEOUS REVERSE CURRENT, (uA) PEAK FORWARD SURGE CURRENT, (A) JUNCTION CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) AVERAGE FORWARD CURENT, (A)