HVM14SRTL-E Renesas

HVM14SR Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0114-0400Z (Previous: ADE-208-084C) Rev.4.00 Oct.08.2003 Features Low forward resistance. (r = 7.0 max) f Low capacitance. (C = 0.25 pF typ) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HVM14SR H7 MPAK Pin Arrangement 3 1. Anode 1 2. Cathode 2 21 3. Cathode 1 (Top View) Anode 2 Rev.4.00, Oct.08.2003, page 1 of 4 HVM14SR 1 Absolute Maximum Ratings * (Ta = 25C) Item Symbol Value Unit Reverse voltage V 50 V R Forward current I 50 mA F Power dissipation Pd 100 mW Junction temperature Tj 125 C Storage temperature Tstg 55 to +125 C Note: 1. Absolute maximum ratings are described each unit separately. 1 Electrical Characteristics * (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V 1.0 V I = 50 mA F F Reverse current I 100 nA V = 50 V R R Capacitance C 0.25 pF V = 50 V, f = 1 MHz R Forward resistance r 7.0 I = 10 mA, f = 100 MHz f F 2 ESD-Capability * 200 V C = 200 pF, Both forward and reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion I 200 nA at V = 50 V R R Rev.4.00, Oct. 08.2003, page 2 of 4