DATASHEET ISL73841SEH FN8846 Rev 3.00 Radiation Tolerant 30V 32-Channel Analog Multiplexer Feb 23, 2018 The ISL73841SEH is a radiation tolerant, 32-channel high ESD Features protected multiplexer fabricated using the proprietary Renesas DLA SMD 5962-15220 P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from 10.8V to 16.5V. It Fabricated using P6SOI process technology has a 5-bit address plus an enable pin that can be driven with ESD protection 8kV (HBM) adjustable logic thresholds to conveniently select one of 32 Rail-to-rail operation available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any Overvoltage protection interaction between the channels. Low r <500 (typical) ON The ISL73841SEH low r allows for improved signal integrity ON Flexible split rail operation and reduced power losses. The ISL73841SEH is also designed + - Positive supply above GND (V ) . +10.8V to +16.5V for cold sparing, making it excellent for high reliability - - Negative supply below GND (V ) -10.8V to -16.5V applications that have redundancy requirements. It is designed to provide a high impedance to the analog source in Adjustable logic threshold control with VREF pin a powered off condition, making it easy to add additional Cold sparing capable (from ground) .25V backup devices without loading signal sources. The ISL73841SEH also incorporates input analog overvoltage Analog overvoltage range (from ground) .35V protection, which disables the switch to protect downstream Off switch leakage . 100nA (maximum) devices. Transition times (t , t ) . 500ns (typical) R F The ISL73841SEH is available in a 48 Ld CQFP or die form and Break-before-make switching operates across the extended temperature range of -55C to +125C. Grounded metal lid (internally connected) Operating temperature range -55C to +125C A 16-channel version in a 28 Ld CDFP is also available. Refer to the ISL73840SEH datasheet for more information. For a list Radiation tolerance of differences between the ISL73841SEH and ISL73840SEH, - Low dose rate (0.01rad(Si)/s) . 50krad(Si) (Note 1) refer to Table 1 on page 3. 2 - SEB LET .86.4MeV cm /mg TH NOTE: Related Literature 1. Product capability established by initial characterization. All For a full list of related documents, visit our website subsequent lots are assurance tested to 50krad (0.01rad(Si)/s) wafer-by-wafer. ISL73841SEH product page 600 ISL73841SEHM 500 IN01 +125C IN02 +25C 400 IN03 OUT ADC 300 . IN32 200 100 5 -55C ADDRESS 0 -20 -15 -10 -5.0 0 5.0 10 15 20 EN SWITCH INPUT VOLTAGE (V) FIGURE 2. r vs POWER SUPPLY ACROSS SWITCH INPUT FIGURE 1. TYPICAL APPLICATION DS(ON) COMMON-MODE VOLTAGE AT +25C FN8846 Rev 3.00 Page 1 of 24 Feb 23, 2018 r () DS(ON) ISL73841SEH Table of Contents Ordering Information 3 Pin Configuration 4 Pin Descriptions . 4 Absolute Maximum Ratings . 5 Thermal Information . 5 Recommended Operating Conditions 5 Electrical Specifications (15V) . 5 Electrical Specifications (12V) . 8 Block Diagram . 10 Timing Diagrams . 11 Typical Performance Curves . 12 Post Low Dose Rate Radiation Characteristics (V = 15V) . 15 Post Low Dose Rate Radiation Characteristics (V = 12V) . 17 Applications Information 19 Power-Up Considerations . 19 Overvoltage Protection . 19 VREF and Logic Functionality 19 Considerations for Redundant Applications 19 ISL73841SEH vs ISL73840SEH 19 Die Dimensions . 20 Interface Materials 20 Assembly Related Information . 20 Additional Information . 20 Weight of Packaged Device . 20 Lid Characteristics . 20 Metalization Mask Layout . 20 Revision History 22 Package Outline Drawing 23 FN8846 Rev 3.00 Page 2 of 24 Feb 23, 2018