X-On Electronics has gained recognition as a prominent supplier of NP82N03PUG-E1-AY MOSFETs across the USA, India, Europe, Australia, and various other global locations. NP82N03PUG-E1-AY MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NP82N03PUG-E1-AY Renesas

NP82N03PUG-E1-AY electronic component of Renesas
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Part No.NP82N03PUG-E1-AY
Manufacturer: Renesas
Category: MOSFETs
Description: NP82N03PUG-E1-AY
This is an 8-bit A/D converter with integrated high speed comparator.
Datasheet: NP82N03PUG-E1-AY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.8567 ea
Line Total: USD 1485.36 
Availability - 0
MOQ: 800  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 800
Multiples : 1
800 : USD 1.8567

   
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RoHS - XON
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We are delighted to provide the NP82N03PUG-E1-AY from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NP82N03PUG-E1-AY and other electronic components in the MOSFETs category and beyond.

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The NP82N03PUG-E1-AY is a part of Renesas' NP series of power MOSFETs. It is an N-channel enhancement MOSFET with a drain current of 8.0A, a drain-source on-state resistance of 0.0090O, and a gate-source voltage of 20V in a TO-251AA package. The device features low-on-resistance, low switching noise, fast switching time, and high power to compact size conversion making it suitable for applications like DC-DC converters and motor drive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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