Product Information

BD2270HFV-TR

BD2270HFV-TR electronic component of ROHM

Datasheet
Gate Drivers MOSFET Controller IC For Load Switching
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.717 ea
Line Total: USD 0.72

2910 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.717
10 : USD 0.5921
30 : USD 0.5378
100 : USD 0.4713
500 : USD 0.3968
1000 : USD 0.3787

1067 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7679
10 : USD 1.5187
100 : USD 1.3408
250 : USD 1.2577
500 : USD 1.1272
1000 : USD 0.9563
3000 : USD 0.8875
9000 : USD 0.8863

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Additional Infomation About Product

Datasheet Controller ICs for High Side NMOSFET BD2270HFV General Description Key Specifications BD2270HFV is a gate driver for high side -CNhannel Input Voltage Range: 2.7V to 5.5V MOSFET that comes with a discharge circuit for the GATE Rise Time (C = 500pF): 130s (Typ) GATE output capacitive load. An internal charge pump GATE Output Voltage(V = 5V): 13.5V(Typ) CC enables the IC to drive the gate of an external high Operating Current: 50A(Typ) side NMOSFET without using any external parts. The Standby Current: 5A (Typ) power up sequence is controlled by a comparator with Operating Temperature Range: -25C to +85C hysteresis function. The space saving HVSOF5 package is used. Package W(Typ) D(Typ) H (Ma x) Features Built-in Charge Pump Circuit Drives the Gate of the External N-Channel Power MOSFET Built-in Discharge Circuit for Output Charge Soft Start Circuit Built-in Comparator with Hysteresis Function at Control Block Input Possible to drive N-channel power MOSFET Applications PCs HVSOF5 PC Peripheral Devices Digital Consumer Electronics 1.60mm x 1.60mm x 0.60mm Typical Application Circuit V V 3.3V 3.3V IN SWITCH OUT SWITCH Load GATE VCC DISC ON/OFF AEN GND BD2270HFV Lineup GATE Output Voltage(V = 5V) CC Package Orderable Part Number Min Typ Max BD2270HFV-TR 10V 13.5V 15V HVSOF5 Reel of 3000 BD2270HFV-GTR Product structureSilicon monolithic integrated circuit This product has not designed protection against radioactive rays www.rohm.com TSZ02201-0E3E0H300230-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/18 TSZ2211114001 21.Aug.2014 Rev.003 Datasheet BD2270HFV Block Diagram GATE VCC Charge OSC Pump (x3) GND DISC Control AEN Pin Configuration (TOP VIEW) Pin Description Pin No. Pin Name I / O Function 1 VCC - Power input terminal 2 GND - Ground terminal Control input terminal Turn on the external N-Channel MOSFET with a high level input. 3 AEN I High level input > 2.0V, low level input < 0.8V 4 DISC O Switch output discharge terminal Gate drive output terminal 5 GATE O Connect to the gate of the external N-Channel MOSFET www.rohm.com TSZ02201-0E3E0H300230-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/18 TSZ2211115001 21.Aug.2014 Rev.003

HS Compliance

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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