High Performance Switching Regulator 60V Synchronous Step-down Switching Regulator (Controller Type) BD9611MUV General Description Key Specifications The BD9611MUV is a high-resistance, wide voltage Input Supply Voltage 10 to 56 V input (10V to 56V), synchronous step-down switching Output Voltage 1.0 to (Vin0.8) V regulator. BD9611MUV offers design flexibility Reference Voltage Accuracy 1.0 % through user-programmable functions such as Gate Drive Voltage (REG10) 9 to 11 V soft-start, operating frequency, high-side current limit, Operating frequency 50 to 500 kHz and loop compensation. BD9611MUV uses voltage pulse width modulation, and drives 2 external N-channel FETs. The Under-Voltage Locked Output (EXUVLO) Package protection connected to its CTL terminal has high VQFN020V4040 4.00 4.00 1.00 accuracy reference voltage. Its threshold voltage can be adjusted by the resistance ratio between VCC and GND as seen by pin CTL. BD9611MUV is safe for pre-biased outputs. It does not turn on the synchronous rectifier until the internal high-side FET has already started switching Features High Resistance and Wide Range Voltage Input : VCC=10V to 56V Regulated Voltage Output to Drive External FET Applications gate: REG10=10V Amusement machines Internal Reference Voltage Accuracy: 0.8V1.0% Factory Automation Equipment Safe for Pre-biased Outputs Office Automation Equipment Adjustable Operating Frequency and Soft-start LED lighting Master/Slave Synchronization General equipment that require 24V or 48V supply Over Current Protection (OCP) Under Voltage Locked Output (UVLO, EXUVLO) Thermal Shut-down (TSD) Typical Application Circuit (Vo=12V, Io=10A) Efficiency Curve 200k 1F 28.26k Efficiency: =95% CTL VCC (V =34V, I =10A, f =250kHz) IN OUT OSC VIN Vo 10F4 FB CLH VIN 100 CLL 1k 15k =15Vto56V 140k RCL 2200pF 180pF 5m 20k 90 INV 10k BST SS HG Nch 80 0.01 F SUD23N06-31L (Vishay Siliconix) REG5 0.47 F VOUT BD9611MUV 70 0.1 F Vo =12V LX RTSS 10F4 5 H 0.01 F (DCR=3m ) 60 RT Vin=34V,Vo=12V 220F REG10 75k SYNC LG Nch 50 RSD221N06 1F (ROHM) 0 5 10 15 CLKOUT Iout A PGND GND STRUCURE: Silicon Monolithic Integrated Circuit Not designed to operate under radioactive environments www.rohm.com TSZ02201-0Q1Q0AJ00230-1-2 2011 ROHM Co., Ltd. All rights reserved. 1/37 TSZ2211114001 17.OCT.2014 Rev.003 Efficiency % BD9611MUV Pin Configuration (Top View) Pin Description 15 14 13 12 11 Pin no. Pin Name Description 1 GND Ground 2 SS Programmable Soft-start 16 10 3 INV Inverting input to the error amplifier 4 FB Output of the error amplifier 5 RCL Programmable current limit setting 6 RT Programmable frequency setting 17 9 7 RTSS Reference voltage pin for RT 8 CLKOUT Internal clock pulse output ( ) Thermal Pad 9 PGND Ground 18 8 10 SYNC Synchronization input for the device 11 LG Gate driver for external Low-side, N-channel FET 12 REG10 Output of 10V internal regulator 19 7 13 LX Connect to switching node of the converter 14 HG Gate driver for external High-side, N-channel FET 15 BST Gate drive voltage input for the High-side N-channel FET 16 CLL Inverting input to current detector 20 6 17 CLH Input to current detector 18 VCC Power supply 19 CTL Shutdown pin 20 REG5 Output of 5V internal regulator 1 2 3 4 5 ( * ) Connecting the thermal pad to GND is recommended to improve thermal dispersion characteristic. Block Diagram VCC VCC VCC 20uA25% CLH REG5 Pulse by pulse OCP stb CLL Hiccup CTL After 2count ocp RCL EXUVLO UVLO 2.6V exuvlo uvlo (VCC,REG5, REG10) stb 3% ocp FB TSD tsd exuvlo REG5 uvlo REG5 BST REG5 tsd REG5 HG DRV LOGIC PWM INV uvlo ERR Low-side Min. ON LX SS REG5 VCC 0.8V1% stb VCC REG10 10V OSC (Internal/Synchronize) REG REG5 LG REG5 5V DRV stb REG PGND RTSS SYNC CLKOUT GND RT www.rohm.com TSZ02201-0Q1Q0AJ00230-1-2 2011 ROHM Co., Ltd. All rights reserved. 2/37 TSZ2211114001 17.OCT.2014 Rev.003