Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2P039-Z General Description Features The PWM type DC/DC converter BM2P039-Z for PWM frequency : 100kHz AC/DC provides an optimum system for all products PWM current mode method that include an electrical outlet. Frequency hopping function BM2P039-Z supports both isolated and non-isolated Burst operation when load is light devices, enabling simpler design of various types of Frequency reduction function low-power electrical converters. Built-in 650V start circuit BM2P039-Z built in a HV starter circuit that tolerates Built-in 650V switching MOSFET 650V, it contributes to low-power consumption. VCC pin under voltage protection With current detection resistors as external devices, a VCC pin overvoltage protection higher degree of design freedom is achieved. SOURCE pin Open protection Switching frequency adopts fixed system. Since SOURCE pin Short protection current mode control is utilized, current is restricted in SOURCE pin Leading-Edge-Blanking function each cycle and excellent performance is demonstrated Per-cycle over current protection circuit in bandwidth and transient response. Soft start The switching frequency is 100 kHz. At light load, the Secondary Over current protection circuit switching frequency is reduced and high efficiency is BR pin AC input low voltage protection achieved. A frequency hopping function is also on chip, which contributes to low EMI. Package W (Typ) x D (Typ) x H (Max) DIP7K 9.27 mm x 6.35 mm x 8.63 mm pitch 2.54 mm Basic Specifications Operating Power Supply Voltage Range : VCC: 8.9V to 26.0V DRAIN: to 650V Operating Current : Normal Mode 1.000mA (Typ) Burst Mode 0.400mA (Typ) Oscillation Frequency : 100kHz (Typ) o o Operating Temperature : -40 C to +105 C MOSFET ON Resistance : 2.4 (Typ) Applications AC adapters, TV and household appliances (vacuum cleaners, humidifiers, air cleaners, air conditioners, IH cooking heaters, rice cookers, etc.) Application circuit + FUSE Diode AC Filter Bridge 85-265Vac - 7 6 5 DRAIN DRAIN VCC ERROR SOURCE BR GND FB AMP 1 2 3 4 Figure 1. Application circuit Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays .w ww.rohm.com TSZ02201-0F1F0A200150-1-2 2016 ROHM Co., Ltd. All rights reserved. 1/19 TSZ22111 14 001 13.Mar.2019 Rev.005 BM2P039-Z Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.3 to 30 V VCC Maximum applied voltage 2 Vmax2 -0.3 to 6.5 V SOURCE, FB, BR Maximum applied voltage 3 Vmax3 650 V DRAIN Drain current pulse I 5.20 A P =10usec, Duty cycle=1% DP W Allowable dissipation Pd 2.00 W o Operating temperature range Topr -40 to +105 C o Maximum junction temperature Tjmax 150 C o Storage temperature range Tstr -55 to +150 C (Note) When mounted (on 74.2 mm 74.2 mm,1.6 mm thick, glass epoxy on double-layer substrate). Reduce to 16 mW/ C when Ta = 25C or above. Operating Conditions (Ta=25C) Parameter Symbol Rating Unit Conditions Power supply voltage range 1 V 8.9 to 26.0 V VCC pin voltage CC Power supply voltage range 2 V to 650 V DRAIN pin voltage DRAIN Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta=25C, VCC=15V) Specifications Parameter Symbol Unit Conditions Minimum Standard Maximum MOSFET Block Between drain and source V 650 - - V I =1mA / V =0V (BR)DDS D GS voltage Drain leak current I - - 100 A V =650V / V =0V DSS DS GS On resistance R - 2.4 3.6 I =0.25A / V =10V DS(ON) D GS Avalanche Energy E 400 J Design assurance AS Avalanche Energy circuit EAS : Avalanche Energy IAS : Avalanche Current V : Drain - Source breakdown voltage (BR)DSS V : Gate - Source voltage GS VDS : Drain - Source voltage VDD : Power supply voltage L : Coil R : Gate resistance G www.rohm.com TSZ02201-0F1F0A200150-1-2 2016 ROHM Co., Ltd. All rights reserved. 2/19 TSZ22111 15 001 13.Mar.2019 Rev.005