Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX1F Series General Features The PWM type DC/DC converter (BM2PXX1F) for PWM frequency : 65kHz AC/DC provide an optimum system for all products PWM current mode method that include an electrical outlet. Burst operation when load is light BM2PXX1F supports both isolated and non-isolated Frequency reduction function devices, enabling simpler design of various types of Built-in 650V start circuit low-power electrical converters. Built-in 650V switching MOSFET BM2PXX1F built in a HV starter circuit that tolerates VCC pin under voltage protection 650V, it contributes to low-power consumption. VCC pin overvoltage protection With current detection resistors as external devices, a SOURCE pin Open protection higher degree of design freedom is achieved. Since SOURCE pin Short protection current mode control is utilized, current is restricted in SOURCE pin Leading-Edge-Blanking function each cycle and excellent performance is demonstrated Per-cycle over current protection circuit in bandwidth and transient response. Soft start The switching frequency is 65 kHz. At light load, the Secondary Over current protection circuit switching frequency is reduced and high efficiency is BR pin AC input low voltage protection achieved. BR pin AC input high voltage protection A frequency hopping function is also on chip, which contributes to low EMI. Package W (Typ.) x D (Typ.) x H (Max.) We can design easily, because BM2PXX1F includes SOP8 5.00mm x 6.20mm x 1.71mm the switching MOSFET. Basic specifications Operating Power Supply Voltage Range: VCC 8.9V to 26.0V DRAIN650V Operating Current: Normal Mode BM2P051F: 0.60mA (Typ.) BM2P091F: 0.50mA (Typ.) Applications Burst Mode: 0.40mA (Typ.) AC adapters and household appliances (vacuum Oscillation Frequency: 65 kHz (Typ.) o o Operating Temperature: - 40 C to +105 C cleaners, humidifiers, air cleaners, air conditioners, IH MOSFET ON Resistance: cooking heaters, rice cookers, etc.) BM2P051F: 4.0 (Typ.) BM2P091F: 8.5 (Typ.) Line up Application circuit Product MOSFET ON resistor 4.0 BM2P051F 8.5 BM2P091F Figure 1Application circuit Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays . www.rohm.com TSZ02201-0F2F0A200020-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/20 7.Mar.2017.Rev.007 TSZ22111 14 001 DatasheetDatasheet BM2PXX1F Absolute Maximum RatingsTa=25C Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.330 V VCC Maximum applied voltage 2 Vmax2 -0.36.5 V SOURCE, FB, BR Maximum applied voltage 3 Vmax3 650 V DRAIN P =10us, Duty cycle=1% W Drain current pulse I 2.60 A DP (BM2P051F) P =10us, Duty cycle=1% W Drain current pulse I 1.30 A DP (BM2P091F) Allowable dissipation Pd 563 mW Operating o Topr -40 +105 C temperature range o MAX junction temperature T 150 C JMAX Storage o -55 +150 Tstr C temperature range (Note1) SOP8 : When mounted (on 70 mm 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate). Reduce to 4.504 mW/C when Ta = 25C or above. Operating ConditionsTa=25C Parameter Symbol Rating Unit Conditions Power supply voltage range 1 V 8.926.0 V VCC pin voltage CC Power supply voltage range 2 V 650 V DRAIN pin voltage DRAIN Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V) Specifications Parameter Symbol Unit Conditions Min Typ Max MOSFET Block Between drain and V 650 - - V I =1mA / V =0V (BR)DDS D GS source voltage Drain leak current I - - 100 uA V =650V / V =0V DSS DS GS I =0.25A / V =10V D GS On resistance R - 4.0 5.5 DS(ON) (BM2P051F) I =0.25A / V =10V D GS On resistance R - 8.5 12.0 DS(ON) (BM2P091F) www.rohm.com TSZ02201-0F2F0A200020-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/20 7.Mar.2017.Rev.007 TSZ22111 15 001