Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 800V MOSFET BM2P074KF-G General Features The PWM type DC/DC converter (BM2P074KF-G) for PWM frequency : 65kHz AC/DC provide an optimum system for all products PWM current mode method that include an electrical outlet. Burst operation when load is light BM2P074KF-G supports both isolated and Frequency reduction function non-isolated devices, enabling simpler design of Built-in 800V start circuit various types of low-power electrical converters. Built-in 800V switching MOSFET BM2P074KF-G built in a HV starter circuit that VCC pin under voltage protection tolerates 800V, it contribut to low-power consumption. VCC pin overvoltage protection With current detection resistors as external devices, a SOURCE pin Open protection higher degree of design freedom is achieved. Since SOURCE pin Short protection current mode control is utilized, current is restricted in SOURCE pin Leading-Edge-Blanking function each cycle and excellent performance is demonstrated Per-cycle over current protection circuit in bandwidth and transient response. Soft start The switching frequency is 65 kHz. At light load, the Secondary Over current protection circuit switching frequency is reduced and high efficiency is achieved. Package W(Typ.) x D(Typ.) x H(Max.) A frequency hopping function is also on chip, which SOP8 5.00mm x 6.20mm x 1.71mm contributes to low EMI. We can design easily, because BM2P074KF-G includes the switching MOSFET. Basic specifications Operating Power Supply Voltage Range: VCC 10.2V to 26.0V Applications DRAIN800V AC adapters and household appliances (vacuum Operating Current: Normal Mode : 0.85mA (Typ.) cleaners, humidifiers, air cleaners, air conditioners, IH Burst Mode:0.40mA (Typ.) cooking heaters, rice cookers, etc.) Oscillation Frequency: 65kHz(Typ.) Operating Temperature: - 40deg. to +105deg. MOSFET ON Resistance: BM2P074KF-G:6.7 (Typ) Application circuit Figure 1Application circuit Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays . www.rohm.com TSZ02201-0F1F0A200270-1-2 2015 ROHM Co., Ltd. All rights reserved. 1/19 14.Mar.2017.Rev.002 TSZ22111 14 001 DatasheetDatasheet BM2P074KF-G Absolute Maximum RatingsTa=25C Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.330 V VCC Maximum applied voltage 2 Vmax2 -0.36.5 V SOURCE, FB Maximum applied voltage 3 Vmax3 800 V DRAIN Drain current pulse I 2.00 A P =10us, Duty cycle=1% DP W Allowable dissipation Pd 0.56 W When implemented o Operating temperature range Topr -40 +105 C o MAX junction temperature Tjmax 150 C o Storage temperature range Tstr -55 +150 C (Note1) SOP8 : When mounted (on 70 mm 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate). Reduce to 4.504 mW/C when Ta = 25C or above. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Operating ConditionsTa=25C Parameter Symbol Rating Unit Conditions Power supply voltage range 1 VCC 10.226.0 V VCC pin voltage Power supply voltage range 2 V 800 V DRAIN pin voltage DRAIN Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C ) Specifications Parameter Symbol Unit Conditions Min Typ Max MOSFET Block Between drain and V 800 - - V I =1mA / V =0V (BR)DDS D GS source voltage Drain leak current I - - 100 uA V =800V / V =0V DSS DS GS On resistance R - 6.7 9.6 I =0.25A / V =10V DS(ON) D GS www.rohm.com TSZ02201-0F1F0A200270-1-2 2015 ROHM Co., Ltd. All rights reserved. 2/19 14.Mar.2017.Rev.002 TSZ22111 15 001