X-On Electronics has gained recognition as a prominent supplier of BR24G02NUX-3ATTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G02NUX-3ATTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G02NUX-3ATTR ROHM

BR24G02NUX-3ATTR electronic component of ROHM
BR24G02NUX-3ATTR ROHM
BR24G02NUX-3ATTR EEPROM
BR24G02NUX-3ATTR  Semiconductors

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Part No. BR24G02NUX-3ATTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 2K(256x8bit) EEPROM
Datasheet: BR24G02NUX-3ATTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.35 ea
Line Total: USD 0.35 
Availability - 1981
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1981
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.35
10 : USD 0.2838
100 : USD 0.238
500 : USD 0.2189
1000 : USD 0.2123
4000 : USD 0.1826
8000 : USD 0.1705
24000 : USD 0.165
48000 : USD 0.1606

   
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We are delighted to provide the BR24G02NUX-3ATTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G02NUX-3ATTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G02-3A General Description 2 BR24G02-3A is a serial EEPROM of I C BUS interface method Packages W(Typ.) x D(Typ.)x H(Max.) Features All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Other devices than EEPROM can be connected to the Not Recommended for same port, saving microcontroller port New Designs 1.6V to 5.5V single power source action most suitable for battery use DIP-T8 TSSOP-B8J 1MHz action is possible (1.7V to 5.5V) 3.00mm x 4.90mm x 1.10mm 9.30mm x 6.50mm x 7.10mm Up to 8 bytes in page write mode Self-timed programming cycle Low current consumption Prevention of write mistake Write (write protect) function added Prevention of write mistake at low voltage MSOP8 SOP8 More than 1 million write cycles 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.20mm x 1.71mm More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh VSON008X2030 SOP-J8 2.00mm x 3.00mm x 0.60mm 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. BR24G02-3A Power Source Capacity Bit Format Type Package Voltage *1 BR24G02-3A DIP-T8 BR24G02F-3A SOP8 BR24G02FJ-3A SOP-J8 2Kbit 2568 BR24G02FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G02FVJ-3A TSSOP-B8J BR24G02FVM-3A MSOP8 BR24G02NUX-3A VSON008X2030 *1 Not Recommended for New Designs. Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100570-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 BR24G02-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation Pd 310 (TSSOP-B8J) mW When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. *1 800 (DIP-T8 ) When using at Ta=25C or higher 8.0mW to be reduced per 1C. Storage Temperature Tstg -65 to +150 C Operation Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not under -0.8V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) *1 Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min. Typ. Max *2 Write cycles 1,000,000 - - Times *2 Data retention 40 - - Years *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply voltage Vcc 1.6 to 5.5 V Input voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V *3 Input Low Voltage1 VIL1 -0.3 - 0.3Vcc V 1.7VVcc5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V *3 Input Low Voltage2 VIL2 -0.3 - 0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, Page write mA Vcc=5.5V, fSCL=1MHz Random read, current read, Supply Current (Read) ICC2 - - 2.0 sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *3 When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100570-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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