X-On Electronics has gained recognition as a prominent supplier of BR24G08FVM-3GTTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G08FVM-3GTTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G08FVM-3GTTR ROHM

BR24G08FVM-3GTTR electronic component of ROHM
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Part No.BR24G08FVM-3GTTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 8K 1024x8bit EEPROM
Datasheet: BR24G08FVM-3GTTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2956 ea
Line Total: USD 0.3 
Availability - 39
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2956
10 : USD 0.2541
100 : USD 0.2323
500 : USD 0.2277
1000 : USD 0.2242
3000 : USD 0.1725

   
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We are delighted to provide the BR24G08FVM-3GTTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G08FVM-3GTTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G08-3 General Description 2 BR24G08-3 is an 8Kbit serial EEPROM of I C BUS interface. Features Packages W (Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation Up to 16Byte in Page Write Mode Bit Format 1K x 8 Self-timed Programming Cycle SOP8 TSSOP-B8M Low Current Consumption 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.10mm Prevention of Write Mistake Write (Write Protect) Function Added Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8M Noise Filter Built in SCL / SDA Terminal TSSOP-B8J 4.90mm x 6.00mm x 1.80mm 3.00mm x 4.90mm x 1.10mm Initial delivery state FFh SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100190-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 11.Jun.2019 Rev.005 TSZ22111 14 001 Datasheet BR24G08-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd W 0.33 (TSSOP-B8M) Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input voltage/ Output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less the Min value of Input - -0.3 to VCC+1.0 V Output Voltage voltage/Output voltage is not below -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, VCC=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) 1,000,000 - - Times Write Cycles (2) Data Retention 40 - - Years (2)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, V =1.6V to 5.5V) CC Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7VVCC5.5V (3) Input Low Voltage1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 CC CC Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6VVCC<1.7V (3) Input Low Voltage2 V -0.3 - 0.2V V 1.6VV <1.7V IL2 CC CC Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVCC<2.5V (SDA) Input Leakage Current I -1 - 1 A V =0 to V LI IN CC Output Leakage Current ILO -1 - 1 A VOUT=0 to VCC (SDA) V =5.5V, f =400kHz, t =5ms, CC SCL WR Supply Current (Write) ICC1 - - 2.0 mA Byte write, Page write V =5.5V, f =400kHz CC SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read V =5.5V, SDA SCL=V CC CC Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100190-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 11.Jun.2019 Rev.005

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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