Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G64-3A General Description 2 BR24G64-3A is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Not Recommended for Other devices than EEPROM can be connected to the same port, saving microcontroller port New Designs 1.6V to 5.5V Single Power Source Operation most suitable for battery use DIP-T8 TSSOP-B8 1MHz operation is possible (1.7V to 5.5V) 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm Up to 32 Byte in Page Write Mode Bit format 8K x 8bit Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake TSSOP-B8J SOP8 WP (Write Protect) Function added 3.00mm x 4.90mm x 1.10mm 5.00mm x 6.20mm x 1.71mm Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. Product structure: Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com . TSZ02201-0R2R0G100040-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/34 TSZ22111 14 001 11.Jun.2019 Rev.008 BR24G64-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Permissible Pd W Dissipation 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) Derate by 8.0mW/C when operating above Ta=25C 0.80 (DIP-T8 ) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, V =1.6V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 40 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage V 1.6 to 5.5 CC V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage 1 VIH1 0.7VCC - VCC+1.0 V 1.7VVCC5.5V (Note3) Input Low voltage 1 VIL1 -0.3 - +0.3VCC V 1.7VVCC5.5V Input High Voltage 2 V 0.8V - V +1.0 V 1.6VVCC<1.7V IH2 CC CC (Note3) Input Low voltage 2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 CC CC I =3.0mA, OL Output Low Voltage 1 V - - 0.4 V OL1 2.5VV 5.5V (SDA) CC I =0.7mA, OL Output Low Voltage 2 V - - 0.2 V OL2 1.6VV <2.5V (SDA) CC Input Leakage Current I -1 - +1 A V =0 to V LI IN CC Output Leakage Current ILO -1 - +1 A VOUT=0 to VCC (SDA) VCC=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, Page write mA VCC=5.5V, fSCL=1MHz Random read, current read, Supply Current (Read) ICC2 - - 2.0 sequential read VCC=5.5V, SDA, SCL=VCC Standby Current ISB - - 2.0 A A0, A1, A2=GND,WP=GND (Note3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100040-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/34 11.Jun.2019 Rev.008 TSZ22111 15 001