X-On Electronics has gained recognition as a prominent supplier of BR24G64FVM-3AGTTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G64FVM-3AGTTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G64FVM-3AGTTR ROHM

BR24G64FVM-3AGTTR electronic component of ROHM
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Part No.BR24G64FVM-3AGTTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 64K 8192 8bit EEPROM
Datasheet: BR24G64FVM-3AGTTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.561 ea
Line Total: USD 0.56 
Availability - 2347
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2347
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.561
10 : USD 0.5181
100 : USD 0.4675
500 : USD 0.4565
1000 : USD 0.4411
3000 : USD 0.4191
6000 : USD 0.4125
9000 : USD 0.4114
24000 : USD 0.4103

2813
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 159
Multiples : 1
159 : USD 0.6687
250 : USD 0.642
500 : USD 0.6187
1000 : USD 0.5985
2500 : USD 0.5809

582
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 45
Multiples : 1
45 : USD 0.9197
50 : USD 0.8337
100 : USD 0.7329
200 : USD 0.7297
500 : USD 0.715

   
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We are delighted to provide the BR24G64FVM-3AGTTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G64FVM-3AGTTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G64-3A General Description 2 BR24G64-3A is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Not Recommended for Other devices than EEPROM can be connected to the same port, saving microcontroller port New Designs 1.6V to 5.5V Single Power Source Operation most suitable for battery use DIP-T8 TSSOP-B8 1MHz operation is possible (1.7V to 5.5V) 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm Up to 32 Byte in Page Write Mode Bit format 8K x 8bit Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake TSSOP-B8J SOP8 WP (Write Protect) Function added 3.00mm x 4.90mm x 1.10mm 5.00mm x 6.20mm x 1.71mm Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. Product structure: Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com . TSZ02201-0R2R0G100040-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/34 TSZ22111 14 001 11.Jun.2019 Rev.008 BR24G64-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Permissible Pd W Dissipation 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) Derate by 8.0mW/C when operating above Ta=25C 0.80 (DIP-T8 ) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, V =1.6V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 40 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage V 1.6 to 5.5 CC V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage 1 VIH1 0.7VCC - VCC+1.0 V 1.7VVCC5.5V (Note3) Input Low voltage 1 VIL1 -0.3 - +0.3VCC V 1.7VVCC5.5V Input High Voltage 2 V 0.8V - V +1.0 V 1.6VVCC<1.7V IH2 CC CC (Note3) Input Low voltage 2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 CC CC I =3.0mA, OL Output Low Voltage 1 V - - 0.4 V OL1 2.5VV 5.5V (SDA) CC I =0.7mA, OL Output Low Voltage 2 V - - 0.2 V OL2 1.6VV <2.5V (SDA) CC Input Leakage Current I -1 - +1 A V =0 to V LI IN CC Output Leakage Current ILO -1 - +1 A VOUT=0 to VCC (SDA) VCC=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, Page write mA VCC=5.5V, fSCL=1MHz Random read, current read, Supply Current (Read) ICC2 - - 2.0 sequential read VCC=5.5V, SDA, SCL=VCC Standby Current ISB - - 2.0 A A0, A1, A2=GND,WP=GND (Note3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100040-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/34 11.Jun.2019 Rev.008 TSZ22111 15 001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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