X-On Electronics has gained recognition as a prominent supplier of BR24L08-W EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24L08-W EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24L08-W ROHM

BR24L08-W electronic component of ROHM
BR24L08-W ROHM
BR24L08-W EEPROM
BR24L08-W  Semiconductors

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See Product Specifications
Part No. BR24L08-W
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM RECOMMENDED ALT 755-BR24T16-WZ
Datasheet: BR24L08-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8857
10 : USD 0.7314
100 : USD 0.4724
1000 : USD 0.3968
2500 : USD 0.3641
10000 : USD 0.3641
25000 : USD 0.3501
50000 : USD 0.3454
100000 : USD 0.3372
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Supply Voltage - Max
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Mxhts
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Programming Voltage
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We are delighted to provide the BR24L08-W from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24L08-W and other electronic components in the EEPROM category and beyond.

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BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 10248 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W 2 The BR24L08-W series is 2-wire (I C BUS type) serial EEPROMs which are electrically programmable. 2 I C BUS is a registered trademark of Philips. z Applications General purpose z Features 1) 1024 registers 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1A (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCLSDA for noise suppression. 14) Initial data FFh in all address. z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply voltage VCC 0.3 to +6.5 V 800(DIP8) 1 450(SOP8) 2 Power dissipation Pd 450(SOP-J8) 2 mW 3 300(SSOP-B8) 4 310(MSOP8) Storage temperature Tstg C 65 to +125 Operating temperature Topr C 40 to +85 Terminal voltage 0.3 to VCC+0.3 V 1 Reduced by 8.0mW for each increase in Ta of 1C over 25C. 2 Reduced by 4.5mW for each increase in Ta of 1C over 25C. 3 Reduced by 3.0mW for each increase in Ta of 1C over 25C. 4 Reduced by 3.1mW for each increase in Ta of 1C over 25C. 1/25 BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W z Recommended operating conditions (Ta=25C) Parameter Symbol Limits Unit Supply voltage VCC 1.8 to 5.5 V Input voltage VIN 0 to VCC V z DC operating characteristics (Unless otherwise specified Ta=40 to 85C, VCC=1.8 to 5.5V) Parameter Symbol Min. Typ. Max. Unit ConditionsHIG input volatge 1 VIH1 0.7VCC V 2.5VVCC5.5VLO input volatge 1 VIL1 0.3VCC V 2.5VVCC5.5VHIG input volatge 2 VIH2 0.8VCC V 1.8VVCC<2.5VLO input volatge 2 VIL2 0.2VCC V 1.8VVCC<2.5VLO output volatge 1 VOL1 0.4 V IOL=3.0mA, 2.5VVCC5.5V, (SDA)LO output volatge 2 VOL2 0.2 V IOL=0.7mA, 1.8VVCC5.5V, (SDA) Input leakage current ILI 1 1 A VIN=0V to VCC Output leakage current ILO 1 1 A VOUT=0V to VCC VCC=5.5V, fSCL=400kHz, tWR=5ms, ICC1 2.0 mA Byte Write, Page Write Operating current VCC=5.5V, fSCL=400kHz ICC2 0.5 mA Random Read, Current Read, Sequential Read VCC=5.5V, SDASCL=VCC, A Standby current ISB 2.0 A0, A1, A2=GND, WP=GND This product is not designed for protection against radioactive rays. 2/25

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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