BR24L08-W ROHM

BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W 10248 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W 2 The BR24L08-W series is 2-wire (I C BUS type) serial EEPROMs which are electrically programmable. 2 I C BUS is a registered trademark of Philips. z Applications General purpose z Features 1) 1024 registers 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1A (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCLSDA for noise suppression. 14) Initial data FFh in all address. z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply voltage VCC 0.3 to +6.5 V 800(DIP8) 1 450(SOP8) 2 Power dissipation Pd 450(SOP-J8) 2 mW 3 300(SSOP-B8) 4 310(MSOP8) Storage temperature Tstg C 65 to +125 Operating temperature Topr C 40 to +85 Terminal voltage 0.3 to VCC+0.3 V 1 Reduced by 8.0mW for each increase in Ta of 1C over 25C. 2 Reduced by 4.5mW for each increase in Ta of 1C over 25C. 3 Reduced by 3.0mW for each increase in Ta of 1C over 25C. 4 Reduced by 3.1mW for each increase in Ta of 1C over 25C. 1/25 BR24L08-W / BR24L08F-W / BR24L08FJ-W Memory ICs BR24L08FV-W / BR24L08FVM-W z Recommended operating conditions (Ta=25C) Parameter Symbol Limits Unit Supply voltage VCC 1.8 to 5.5 V Input voltage VIN 0 to VCC V z DC operating characteristics (Unless otherwise specified Ta=40 to 85C, VCC=1.8 to 5.5V) Parameter Symbol Min. Typ. Max. Unit ConditionsHIG input volatge 1 VIH1 0.7VCC V 2.5VVCC5.5VLO input volatge 1 VIL1 0.3VCC V 2.5VVCC5.5VHIG input volatge 2 VIH2 0.8VCC V 1.8VVCC<2.5VLO input volatge 2 VIL2 0.2VCC V 1.8VVCC<2.5VLO output volatge 1 VOL1 0.4 V IOL=3.0mA, 2.5VVCC5.5V, (SDA)LO output volatge 2 VOL2 0.2 V IOL=0.7mA, 1.8VVCC5.5V, (SDA) Input leakage current ILI 1 1 A VIN=0V to VCC Output leakage current ILO 1 1 A VOUT=0V to VCC VCC=5.5V, fSCL=400kHz, tWR=5ms, ICC1 2.0 mA Byte Write, Page Write Operating current VCC=5.5V, fSCL=400kHz ICC2 0.5 mA Random Read, Current Read, Sequential Read VCC=5.5V, SDASCL=VCC, A Standby current ISB 2.0 A0, A1, A2=GND, WP=GND This product is not designed for protection against radioactive rays. 2/25