X-On Electronics has gained recognition as a prominent supplier of BR24S08FVM-WTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24S08FVM-WTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24S08FVM-WTR ROHM

BR24S08FVM-WTR electronic component of ROHM
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Part No.BR24S08FVM-WTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Zener Diode 100mW 2 Pin.
Datasheet: BR24S08FVM-WTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6466 ea
Line Total: USD 0.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6466
10 : USD 0.6016
100 : USD 0.5434
500 : USD 0.5304
3000 : USD 0.4651
9000 : USD 0.4354
24000 : USD 0.4354

   
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We are delighted to provide the BR24S08FVM-WTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24S08FVM-WTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24Sxxx-W (8K 16K 32K 64K 128K 256K) General Description 2 BR24Sxxx-W is a serial EEPROM of I C BUS interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port TSSOP-B8 SOP8 1.7V to 5.5V single power source action most suitable 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm for battery use FAST MODE 400kHz at 1.7V to 5.5V Page write mode useful for initial value write at factory shipment Highly reliable connection by Au pad and Au wire SOP- J8 TSSOP-B8J Auto erase and auto end function at data rewrite 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm Low current consumption At write operation (5V) : 0.5mA (Typ.) At read operation (5V) : 0.2mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm Write mistake prevention function at low voltage Data rewrite up to 1,000,000 times Data kept for 40 years Noise filter built in SCL / SDA terminal Shipment data all address FFh VSON008X2030 2.00mm x 3.00mm x 0.60mm Page write Number of pages 16Byte 32Byte 64Byte BR24S08-W BR24S32-W BR24S128-W Product number BR24S16-W BR24S64-W BR24S256-W BR24Sxxx-W Bit Power source VSON008 Capacity Type SOP8 SOP-J8 SSOP-B8TSSOP-B8 MSOP8 TSSOP-B8J format voltage X2030 8Kbit 1K8 BR24S08-W 1.7V to 5.5V 16Kbit 2K8 BR24S16-W 1.7V to 5.5V 32Kbit 4K8 BR24S32-W 1.7V to 5.5V 64Kbit 8K8 BR24S64-W 1.7V to 5.5V 128Kbit 16K8 BR24S128-W 1.7V to 5.5V 256Kbit 32K8 BR24S256-W 1.7V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100320-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/33 TSZ2211114001 20.AUG.2012 Rev.001Datasheet BR24Sxxx-W (8K 16K 32K 64K 128K 256K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC 450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1. Power Dissipation Pd 330 (TSSOP-B8) mW When using at Ta=25 or higher 3.3mW to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1. 300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1. Storage Temperature Tstg 65 to +125 Operating Temperature Topr 40 to +85 Terminal Voltage -0.3 to Vcc+1.0 V Memory cell characteristics (Ta=25, Vcc=1.7V to 5.5V) Limits Parameter Unit Min. Typ. Max. *1 Number of data rewrite times 1,000,000 - - Times *1 Data hold years 40 - - Years *1 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.7 to 5.5 V Input voltage V 0 to Vcc IN Electrical Characteristics (Unless otherwise specified, Ta=-40 to +85, VCC=1.7V to 5.5V) Limits Parameter Symbol Unit Condition Min Typ. Max. Input Voltage1 VIH1 0.7Vcc - Vcc+1.0 V Input Voltage1 VIL1 -0.3 - 0.3Vcc V Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 2.5VVcc5.5V (SDA) Output Voltage2 VOL2 - - 0.2 V IOL=0.7mA , 1.7VVcc2.5V (SDA) Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V , fSCL =400kHz, tWR=5ms - - 2.0 Byte Write, Page Write BR24S08/16/32/64-W ICC1 mA Current consumption Vcc=5.5V , fSCL =400kHz, tWR=5ms - - 2.5 at action Byte Write, Page Write BR24S128/256-W Vcc=5.5V , fSCL =400kHz ICC2 - - 0.5 mA Random read, Current read, Sequential read Vcc=5.5V , SDASCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND, WP=GND www.rohm.com TSZ02201-0R2R0G100320-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/33 TSZ2211115001 20.AUG.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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