Datasheet
Serial EEPROM series Standard EEPROM
2
I C BUS EEPROM (2-Wire)
BR24Sxxx-W
(8K 16K 32K 64K 128K 256K)
General Description
2
BR24Sxxx-W is a serial EEPROM of I C BUS interface method
Features Packages W(Typ.) x D(Typ.) x H(Max.)
2
Completely conforming to the world standard I C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
Other devices than EEPROM can be connected to
the same port, saving microcontroller port
TSSOP-B8
SOP8
1.7V to 5.5V single power source action most suitable
5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm
for battery use
FAST MODE 400kHz at 1.7V to 5.5V
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
SOP- J8
TSSOP-B8J
Auto erase and auto end function at data rewrite
4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm
Low current consumption
At write operation (5V) : 0.5mA (Typ.)
At read operation (5V) : 0.2mA (Typ.)
At standby operation (5V) : 0.1A (Typ.)
Write mistake prevention function
Write (write protect) function added SSOP-B8 MSOP8
3.00mm x 6.40mm x 1.35mm
2.90mm x 4.00mm x 0.90mm
Write mistake prevention function at low voltage
Data rewrite up to 1,000,000 times
Data kept for 40 years
Noise filter built in SCL / SDA terminal
Shipment data all address FFh
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Page write
Number of pages 16Byte 32Byte 64Byte
BR24S08-W BR24S32-W BR24S128-W
Product number
BR24S16-W BR24S64-W BR24S256-W
BR24Sxxx-W
Bit Power source VSON008
Capacity Type SOP8 SOP-J8 SSOP-B8TSSOP-B8 MSOP8 TSSOP-B8J
format voltage X2030
8Kbit 1K8 BR24S08-W 1.7V to 5.5V
16Kbit 2K8 BR24S16-W 1.7V to 5.5V
32Kbit 4K8 BR24S32-W 1.7V to 5.5V
64Kbit 8K8 BR24S64-W 1.7V to 5.5V
128Kbit 16K8 BR24S128-W 1.7V to 5.5V
256Kbit 32K8 BR24S256-W 1.7V to 5.5V
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays
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TSZ02201-0R2R0G100320-1-2
2012 ROHM Co., Ltd. All rights reserved.
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TSZ2211114001
20.AUG.2012 Rev.001Datasheet
BR24Sxxx-W (8K 16K 32K 64K 128K 256K)
Absolute Maximum Ratings (Ta=25)
Parameter Symbol Ratings Unit Remarks
Supply Voltage V -0.3 to +6.5 V
CC
450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1.
450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1.
300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1.
Power Dissipation Pd 330 (TSSOP-B8) mW When using at Ta=25 or higher 3.3mW to be reduced per 1.
310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1.
310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1.
300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1.
Storage Temperature Tstg 65 to +125
Operating Temperature Topr 40 to +85
Terminal Voltage -0.3 to Vcc+1.0 V
Memory cell characteristics (Ta=25, Vcc=1.7V to 5.5V)
Limits
Parameter Unit
Min. Typ. Max.
*1
Number of data rewrite times 1,000,000 - - Times
*1
Data hold years 40 - - Years
*1 Not 100% TESTED
Recommended Operating Ratings
Parameter Symbol Ratings Unit
Power source voltage Vcc 1.7 to 5.5
V
Input voltage V 0 to Vcc
IN
Electrical Characteristics
(Unless otherwise specified, Ta=-40 to +85, VCC=1.7V to 5.5V)
Limits
Parameter Symbol Unit Condition
Min Typ. Max. Input Voltage1 VIH1 0.7Vcc - Vcc+1.0 V Input Voltage1 VIL1 -0.3 - 0.3Vcc V Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 2.5VVcc5.5V (SDA) Output Voltage2 VOL2 - - 0.2 V IOL=0.7mA , 1.7VVcc2.5V (SDA)
Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc
Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA)
Vcc=5.5V , fSCL =400kHz, tWR=5ms
- - 2.0
Byte Write, Page Write BR24S08/16/32/64-W
ICC1 mA
Current consumption Vcc=5.5V , fSCL =400kHz, tWR=5ms
- - 2.5
at action
Byte Write, Page Write BR24S128/256-W
Vcc=5.5V , fSCL =400kHz
ICC2 - - 0.5 mA
Random read, Current read, Sequential read
Vcc=5.5V , SDASCL=Vcc
Standby Current ISB - - 2.0 A
A0, A1, A2=GND, WP=GND
www.rohm.com
TSZ02201-0R2R0G100320-1-2
2012 ROHM Co., Ltd. All rights reserved.
2/33
TSZ2211115001
20.AUG.2012 Rev.001