Datasheet Automotive Series Serial EEPROMs 125C SPI BUS ICs BR25xxxxFamily BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K) Description BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action Up to 5MHz (Max) Wait Function by HOLDB Terminal. Part or Whole of Memory Arrays Settable as Read Only Memory Area by Program. 2.5 to 5.5V single power source action most suitable for battery use. Page Write Mode Useful for Initial Value Write at SOP8 Factory Shipment. 5.00mm x 6.20mm x 1.71mm Highly Reliable Connection by Au Pad and Au Wire. For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1) Auto Erase and Auto End Function at Data Rewrite. Low Current Consumption At Write Action (5V) : 1.5mA (Typ) At Read Action (5V) : 1.0mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action SOP-J8 Write Mistake Prevention Function 4.90mm x 6.00mm x 1.65mm Write Prohibition at Power on. Write Prohibition by Command Code (WRDI). Write Prohibition by WPB Pin. Write Prohibition Block Setting by Status Registers (BP1, BP0) Write Mistake Prevention Function at Low TSSOP-B8 Voltage. 3.00mm x 6.40mm x 1.20mm Data at Shipment Memory Array: FFh, Status Register WPEN, BP1, BP0 : 0 Data Kept for 40 Years. Data Rewrite Up to 1,000,000 Times. AEC-Q100 Qualified Page Write Number of pages 16 Byte 32 Byte BR25H010-WC BR25H080-WC Product Number BR25H020-WC BR25H160-WC BR25H040-WC BR25H320-WC BR25Hxxx-WC Series Capacity Bit Format Type Power Source Voltage SOP8 SOP-J8 TSSOP-B8 1Kbit 1288 BR25H010-WC 2.5 to 5.5V 2Kbit 2568 BR25H020-WC 2.5 to 5.5V 4Kbit 5128 BR25H040-WC 2.5 to 5.5V 8Kbit 1K8 BR25H080-WC 2.5 to 5.5V 16Kbit 2K8 BR25H160-WC 2.5 to 5.5V 32Kbit 4Kx8 BR25H320-WC 2.5 to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays . www.rohm.com TSZ02201-0R1R0G100060-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 31.Oct.2013 Rev.002 Not Recommended for New DesignsDatasheetDatasheet BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K) Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Remarks Impressed Voltage V -0.3 to +6.5 V CC 0.56 (SOP8) When using at Ta=25C or higher, 4.5mW to be reduced per 1C Permissible When using at Ta=25C or higher, 4.5mW to be reduced per 1C Pd 0.56 (SOP-J8) W Dissipation When using at Ta=25C or higher, 3.3mW to be reduced per 1C 0.41 (TSSOP-B8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Topr -40 to +125 C Range Terminal Voltage - -0.3 to V+0.3 V CC Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (V =2.5V to 5.5V) CC Limits Parameter Unit Condition Min Typ Max 1,000,000 - - Times Ta85C (Note1) Number of Data Rewrite Times 500,000 - - Times Ta105C 300,000 - - Times Ta125C 40 - - Years Ta25C (Note1) Data Hold Years 20 - - Years Ta125C (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Power Source Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC Input / Output Capacity (Ta=25C, Frequency=5MHz) Parameter Symbol Min Max Unit Conditions (Note1) Input Capacity C - 8 V =GND IN IN pF (Note1) Output Capacity C - 8 V =GND OUT OUT (Note1) Not 100% TESTED Electrical Characteristics (Unless otherwise specified, Ta=-40C to +125C, V =2.5V to 5.5V) CC Limits Parameter Symbol Unit Conditions Min Typ Max 2.5V V 5.5V H Input Voltage V 0.7xV - V +0.3 V IH CC CC CC L Input Voltage V -0.3 - 0.3xV V 2.5V V 5.5V IL CC CC I =2.1mA L Output Voltage V 0 - 0.4 V OL OL H Output Voltage V V-0.5 - V V I =-0.4mA OH CC CC OH V =0 to V Input Leak Current I -10 - 10 A IN CC LI Output Leak Current I -10 - 10 A V =0 to V , CSB=V LO OUT CC CC V =2.5V, f =5MHz, t =5ms CC SCK E/W I - - 2.0 mA V /V =0.9V /0.1V , SO=OPEN CC1 IH IL CC CC Current Consumption at Write Byte write, Page write, Write status register Action V =5.5V, f =5MHz, t =5ms CC SCK E/W I - - 3.0 mA V /V =0.9V /0.1V , SO=OPEN CC2 IH IL CC CC Byte write, Page write, Write status register V =2.5V, f =5MHz CC SCK I - - 1.5 mA V /V =0.9V /0.1V , SO=OPEN CC3 IH IL CC CC Current Consumption at Read Read, Read status register V =5.5V, f =5MHz Action CC SCK V /V =0.9V /0.1V , SO=OPEN I - - 2.0 mA IH IL CC CC CC4 Read, Read status register V =5.5V CC CSB=HOLDB=WPB=V , SCK=SI=V or =GND, Standby Current I - - 10 A CC CC SB SO=OPEN www.rohm.com TSZ02201-0R1R0G100060-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211115001 31.Oct.2013 Rev.002 Not Recommended for New Designs