Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM BR25H128-2C General Description BR25H128-2C is a serial EEPROM of SPI BUS interface method. Features High speed clock action up to 10MHz (Max.) SOP8, SOP-J8 Package Wait function by HOLDB terminal. Data at shipment Memory array: FFh, status register Part or whole of memory arrays settable as read only WPEN, BP1, BP0 : 0 memory area by program. More than 100 years data retention. 2.5V to 5.5V single power source action most More than 1 million write cycles. suitable AEC-Q100 Qualified. for battery use. Page write mode useful for initial value write at Package factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Address auto increment function at read operation Prevention of write mistake Write prohibition at power on. SOP8 SOP-J8 Write prohibition by command code (WRDI). 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. Page write Number of pages 64 Byte Product Number BR25H128-2C BR25H128-2C Capacity Bit Format Product Number Supply Voltage SOP8 SOP-J8 128Kbit 16Kx8 BR25H128-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100130-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/30 8.Sep.2014 Rev.002 TSZ2211114001 Datasheet BR25H128-2C Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply Voltage VCC -0.3 to +6.5 V *1 0.56(SOP8) Permissible Dissipation Pd W *2 0.56(SOP-J8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V Electrostatic Discharge Voltage V -6000 to +6000 V ESD (Human Body Model) When using at Ta=25 or higher, 4.5mW (*1,*2)to be reduced per 1 Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *3 Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C *3 Data Retention 60 Years Ta105C 50 Years Ta125C *3: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *4 Input Capacity C V =GND 8 IN IN pF *4 Output Capacity C V =GND 8 OUT OUT *4: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100130-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/30 8.Sep.2014 Rev.002 TSZ2211115001