X-On Electronics has gained recognition as a prominent supplier of BR25L010FVM-WTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR25L010FVM-WTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR25L010FVM-WTR ROHM

BR25L010FVM-WTR electronic component of ROHM
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Part No.BR25L010FVM-WTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Serial-SPI 1K-bit 128 x 8 2.5V/3.3V/5V 8-Pin MSOP T/R
Datasheet: BR25L010FVM-WTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
935: USD 0.0405 ea
Line Total: USD 37.87 
Availability - 0
MOQ: 935  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 935
Multiples : 1
935 : USD 0.0405

   
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We are delighted to provide the BR25L010FVM-WTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR25L010FVM-WTR and other electronic components in the EEPROM category and beyond.

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Rcaflga_jLmrc High Reliability Serial EEPROMs SPI BUS Serial EEPROMs BR25family BR25L010-W series, BR25L020-W series, BR25L040-W series, BR25L080-W series, BR25L160-W series, BR25L320-W series, BR25L640-W series Lm,/.../C@R.3 Description BR25L -W series is a serial EEPROM of SPI BUS interface method. Features Page write Number of 16 Byte 32 Byte pages BR25L080-W BR25L010-W BR25L160-W Product BR25L020-W number BR25L320-W BR25L040-W BR25L640-W *1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8 *2 BR25L320/640-W : SOP8, SOP-J8 BR25L series Power source SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J Capacity Bit format Type voltage F FJ FV FVT FVM FVJ 1Kbit 128 X 8 BR25L010-W 1.8 ~ 5.5V 2Kbit 256 X 8 BR25L020-W 1.8 ~ 5.5V 4Kbit 512 X 8 BR25L040-W 1.8 ~ 5.5V 8Kbit 1K X 8 BR25L080-W 1.8 ~ 5.5V 16Kbit 2K X 8 BR25L160-W 1.8 ~ 5.5V 32Kbit 4K X 8 BR25L320-W 1.8 ~ 5.5V 64Kbit 8K X 8 BR25L640-W 1.8 ~ 5.5V www.rohm.com 1/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved. BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W Technical Note Absolute maximum ratings (Ta = 25C) Recommended action conditions Parameter Symbol Limits Unit Parameter Symbol Limits Unit Impressed voltage VCC -0.3 ~ +6.5 V Power source voltage VCC 1.8 ~ 5.5 V *1 Input voltage Vin 0 ~ VCC 450(SOP8) *2 450(SOP-J8) Memory cell characteristics (Ta=25C, VCC=1.8 ~ 5.5V) mW Permissible *3 300(SSOP-B8) Limits Pd dissipation Parameter Unit *4 Min. Typ. Max. 330(TSSOP-B8) *1 Number of data rewrite times 1,000,000 Times *5 310(MSOP8) *1 Data hold years 40 Years *6 310(TSSOP-B8J) *1:Not 100% TESTED Storage Tstg -65 ~ +125 C temperature range Operating Input / output capacity (Ta=25C, frequency=5MHz) Topr -40 ~ +85 C temperature range Terminal voltage -0.3 ~ VCC+0.3 V Parameter Symbol Conditions Min. Max. Unit *1 Input capacity CIN VIN=GND 8pF When using at Ta = 25C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1C *1 Output capacity COUT VOUT=GND 8pF *1:Not 100% TESTED Electrical characteristics (Unless otherwise specified, Ta = 40 ~ +85C, VCC = 1.8 ~ 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. 0.7x VCC input voltage 1 VIH1 V 1.8VCC5.5V VCC +0.3 0.3x input voltage 1 VIL1 -0.3 V 1.8VCC5.5V VCC output voltage 1 VOL1 0 0.4 V IOL=2.1mA(VCC=2.5V ~ 5.5V) output voltage 2 VOL2 0 0.2 IOL=150A(VCC=1.8V ~ 2.5V) V VCC = = output voltage 1 VOH1 VCC V IOH -0.4mA(VCC 2.5V ~ 5.5V) -0.5 VCC VCC V output voltage 2 VOH2 IOH=-100A(VCC=1.8V ~ 2.5V) -0.2 Input leak current ILI -1 1 A = VIN 0 ~ VCC Output leak current ILO -1 1 A = = VOUT 0 ~ VCC,CS VCC = = = VCC 1.8V,fSCK 2MHz,tE/W 5ms Byte write 1.0 mA ICC1 Page write Write status register VCC=2.5V,fSCK=5MHz,tE/W=5ms Current consumption at write Byte write 2.0 mA ICC2 action Page write Write status register = = = VCC 5.5V,fSCK 5MHz,tE/W 5ms Byte write ICC3 3.0 mA Page write Write status register = = VCC 2.5V,fSCK 5MHz Read ICC4m 1.5A Current consumption at read Read status register action VCC=5.5V,fSCK=5MHz Read 2.0 mA ICC5 Read status register = VCC 5.5V Standby current ISB 2 A = = = = = = CS HOLD WP VCC,SCK SI VCC or GND,SO=OPEN Radiation resistance design is not made. Block diagram VOLTAGE INSTRUCTION DECODE DETECTION CS CONTROL CLOCK WRITE HIGH VOLTAGE GENERATION SCK INHIBITION GENERATOR INSTRUCTION SI REGISTER STATUS REGISTER ADDRESS ADDRESS *1 7bit : BR25L010-W 7~13bit *1 HOLD 7~13bit *1 REGISTER DECODER 8bit : BR25L020-W 1K~64K 9bit : BR25L040-W EEPROM 10bit : BR25L080-W WP DATA READ/WRITE 11bit : BR25L160-W 8bit 8bit 12bit : BR25L320-W REGISTER AMP 13bit : BR25L640-W SO Fig.1 Block diagram www.rohm.com 2/16 2010.07 - Rev. B 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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