Datasheet WL-CSP EEPROM family BR25S128GUZ-W (128K) General Description BR25S128GUZ-W is a 16K8bit serial EEPROM of SPI BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) High speed clock action up to 10MHz (Max.) Wait function by HOLDB terminal Part or whole of memory arrays settable as read only memory area by program 1.7V to 5.5V single power source action most suitable for battery use 64Byte page write mode useful for initial value write at factory shipment For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Auto erase and auto end function at data rewrite Low current consumption At write action (5V) : 1.5mA (Typ.) At read action (5V) : 1.0mA (Typ.) VCSP35L2 At standby action (5V) : 0.1A (Typ.) 2.00mm x 2.63mm x 0.40mm Address auto increment function at read action Write mistake prevention function Write prohibition at power on Write prohibition by command code (WRDI) Write prohibition by WP pin Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage Data kept for 40 years Data rewrite up to 1,000,000 times Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 Page write Page 64Byte Part Number BR25S128GUZ-W BR25S128GUZ-W Capacity Bit format Power source voltage VCSP35L2 128Kbit 16K8 1.7V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100310-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/23 TSZ2211114001 19.Jul.2012 Rev.001Datasheet BR25S128GUZ-W (128K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 220 (VCSP35L2) mW Degradation is done at 4.5mW, for operation above 25. Storage Temperature Tstg 65 to +125 Operating Temperature Topr 40 to +85 1 Terminal Voltage -0.3 to Vcc+0.3 * V *1 The Max value of Terminal Voltage is not over 6.5V. Memory cell characteristics (Ta=25C , Vcc=1.7V to 5.5V) Limits Parameter Unit Min. Typ. Max. Number of data rewrite times *1 1,000,000 - - Times Data hold years *1 40 - - Years *1 Not 100% TESTED Recommended Operating Ratings Unit Parameter Symbol Ratings Power source voltage Vcc 1.7 to 5.5 V Input voltage V 0 to Vcc IN Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min. Max. Unit Conditions Input capacity *1 C 8 V =GND IN IN pF Output capacity *1 C 8 V =GND OUT OUT *1 Not 100% TESTED. Electrical characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.7V to 5.5V) Limits Parameter Symbo Unit Conditions l Min. Typ. Max. H Input Voltage1 1.7Vcc5.5V VIH1 0.7xVcc Vcc+0.3 V L Input Voltage1 VIL1 -0.3 0.3xVcc V 1.7Vcc5.5V L Output Voltage1 IOL=2.1mA, 2.5Vcc<5.5V VOL1 0 0.4 V L Output Voltage2 VOL2 0 0.2 V IOL=1.0mA, 1.7Vcc<2.5V IOH=-0.4mA, 2.5VVcc<5.5V H Output Voltage1 VOH1 Vcc-0.2 Vcc V H Output Voltage2 IOH=-100 A, 1.7Vcc<2.5V VOH2 Vcc-0.2 Vcc V Input Leakage Current ILI -1 1 A V =0 to Vcc IN Output Leakage Current ILO -1 1 A V =0 to Vcc, CSB=Vcc OUT Vcc=1.8V,fSCK=5MHz, tE/W=5ms ICC1 0.5 mA Byte WritePage Write Vcc=2.5V,fSCK=10MHz, tE/W=5ms Operating Current Write ICC2 1 mA Byte WritePage Write Vcc=5.5V,fSCK=10MHz, tE/W=5ms ICC3 2 mA Byte WritePage Write Vcc=1.8V,fSCK=5MHz, SO=OPEN ICC4 1 mA Read, Read Status Register Vcc=2.5V,fSCK=2MHz, SO=OPEN ICC5 1 mA Read, Read Status Register Vcc=2.5V,fSCK=5MHz, SO=OPEN ICC6 1.5 mA Read, Read Status Register Vcc=2.5V,fSCK=10MHz, SO=OPEN Operating Current Read ICC7 2 mA Read, Read Status Register Vcc=5.5V,fSCK=5MHz, SO=OPEN ICC8 2 mA Read, Read Status Register Vcc=5.5V,fSCK=10MHz, SO=OPEN ICC9 4 mA Read, Read Status Register Vcc=5.5V,fSCK=20MHz, SO=OPEN ICC10 8 mA Read, Read Status Register Vcc=5.5V, CSB=Vcc, SCK=SI=Vcc or GND Standby Current ISB 2 A HOLDB=WP=Vcc, SO=OPEN www.rohm.com TSZ02201-0R2R0G100310-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/23 TSZ2211115001 19.Jul.2012 Rev.001