X-On Electronics has gained recognition as a prominent supplier of BR25S256F-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR25S256F-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR25S256F-WE2 ROHM

BR25S256F-WE2 electronic component of ROHM
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Part No.BR25S256F-WE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM SPI 256K BIT 32K X 8 1.8V/2.5V/3.3V/5V
Datasheet: BR25S256F-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.903 ea
Line Total: USD 1.9 
Availability - 578
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
578
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.903
10 : USD 1.606
100 : USD 1.507
500 : USD 1.463
1000 : USD 1.408
2500 : USD 1.265
5000 : USD 1.265
10000 : USD 1.221
25000 : USD 1.21

   
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We are delighted to provide the BR25S256F-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR25S256F-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25Sxxx-W Series (32K 64K 128K 256K) General Description BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) High speed clock action up to 20MHz (Max.) Wait function by HOLDB terminal Part or whole of memory arrays settable as read only memory area by program 1.7V to 5.5V single power source action most suitable for battery use TSSOP-B8 SOP8 Page write mode useful for initial value write at 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm factory shipment Highly reliable connection by Au pad and Au wire For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Auto erase and auto end function at data rewrite Low current consumption SOP- J8 TSSOP-B8J At write action (5V) : 1.5mA (Typ.) 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm At read action (5V) : 1.0mA (Typ.) At standby action (5V) : 0.1A (Typ.) Address auto increment function at read action Write mistake prevention function Write prohibition at power on Write prohibition by command code (WRDI) SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm Write prohibition by WP pin Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage Data kept for 40 years VSON008X2030 Data rewrite up to 1,000,000 times 2.00mm x 3.00mm x 0.60mm Data at shipment Memory array: FFh Status register: WPEN, BP1, BP0 : 0 Page write Page 32Byte 64Byte BR25S320-W BR25S128-W Part Number BR25S640-W BR25S256-W BR25Sxxx-W Series Power source VSON008 Capacity Bit format SOP8 SOP-J8 SSOP-B8TSSOP-B8MSOP8 TSSOP-B8J voltage X2030 32Kbit 4K8 1.7V to 5.5V 64Kbit 8K8 1.7V to 5.5V 128Kbit 16K8 1.7V to 5.5V 256Kbit 32K8 1.7V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100330-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/31 TSZ2211114001 21.AUG.2012 Rev.001Datasheet BR25Sxxx-W Series (32K 64K 128K 256K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC 450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1. 300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1. Power Dissipation Pd 330 (TSSOP-B8) mW When using at Ta=25 or higher 3.3mW to be reduced per 1. 310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1. 300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1. Storage Temperature Tstg 65 to +125 Operating Temperature Topr 40 to +85 Terminal Voltage -0.3 to Vcc+0.3 V Memory cell characteristics (Ta=25C , Vcc=1.7V to 5.5V) Limits Parameter Unit Min. Typ. Max. Number of data rewrite times *1 1,000,000 - - Times Data hold years *1 40 - - Years *1 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.7 to 5.5 V Input voltage V 0 to Vcc IN Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min. Max. Unit Conditions Input capacity *1 C 8 V =GND IN IN pF Output capacity *1 C 8 V =GND OUT OUT *1 Not 100% TESTED. Electrical characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.7V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. H Input Voltage1 VIH1 0.7xVcc Vcc+0.3 V 1.7Vcc5.5V L Input Voltage1 VIL1 -0.3 0.3xVcc V 1.7Vcc5.5V L Output Voltage1 VOL1 0 0.4 V IOL=2.1mA, 2.5Vcc<5.5V L Output Voltage2 VOL2 0 0.2 V IOL=1.0mA, 1.7Vcc<2.5V H Output Voltage1 VOH1 Vcc-0.2 Vcc V IOH=-0.4mA, 2.5VVcc<5.5V H Output Voltage2 VOH2 Vcc-0.2 Vcc V IOH=-100A, 1.7Vcc<2.5V Input Leakage Current ILI -1 1 AV =0 to Vcc IN Output Leakage Current ILO -1 1 AV =0 to Vcc, CSB=Vcc OUT *1 0.5 Vcc=1.8V, fSCK=5MHz, tE/W=5ms ICC1 mA *2 Byte Write, Page Write, Write Status register 1 *1 1 Vcc=2.5V, fSCK=10MHz, tE/W=5ms Operating Current Write ICC2 mA *2 1.5 Byte Write, Page Write, Write Status register *1 2 Vcc=5.5V, fSCK=20MHz, tE/W=5ms ICC3 mA *2 3 Byte Write, Page Write, Write Status register Vcc=1.8V, fSCK=5MHz, SO=OPEN ICC4 1 mA Read, Read Status Register Vcc=2.5V, fSCK=2MHz, SO=OPEN ICC5 1 mA Read, Read Status Register Vcc=2.5V, fSCK=5MHz, SO=OPEN ICC6 1.5 mA Read, Read Status Register Vcc=2.5V, fSCK=10MHz, SO=OPEN Operating Current Read ICC7 2 mA Read, Read Status Register Vcc=5.5V, fSCK=5MHz, SO=OPEN ICC8 2 mA Read, Read Status Register Vcc=5.5V, fSCK=10MHz, SO=OPEN ICC9 4 mA Read, Read Status Register Vcc=5.5V, fSCK=20MHz, SO=OPEN ICC10 8 mA Read, Read Status Register Vcc=5.5V, SO=OPEN Standby Current ISB 2 A CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND *1 BR25S320/640-W *2 BR25S128/256-W www.rohm.com TSZ02201-0R2R0G100330-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/31 TSZ2211115001 21.AUG.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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ROHM Semicon
ROHM Semiconductor
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