X-On Electronics has gained recognition as a prominent supplier of BR34L02FV-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR34L02FV-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR34L02FV-WE2 ROHM

BR34L02FV-WE2 electronic component of ROHM
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Part No.BR34L02FV-WE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM SRL 256X8 BIT
Datasheet: BR34L02FV-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
37: USD 2.0684 ea
Line Total: USD 76.53 
Availability - 0
MOQ: 37  Multiples: 37
Pack Size: 37
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.324
5000 : USD 0.3
7500 : USD 0.3
10000 : USD 0.3

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3162
10000 : USD 0.299
25000 : USD 0.2933
50000 : USD 0.2772

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 37
Multiples : 37
37 : USD 2.0684

   
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We are delighted to provide the BR34L02FV-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR34L02FV-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34L02-W General Description BR34L02-W is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features Packages W(Typ.) x D(Typ.) x H(Max.) 2568 bit architecture serial EEPROM Wide operating voltage range: 1.7V-5.5V Two-wire serial interface High reliability connection using Au pads and Au wires Self-Timed Erase and Write Cycle Page Write Function (16byte) Write Protect Mode SSOP-B8 3.00mm x 6.40mm x 1.35mm Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption Write ( at 5V ) :1.2mA (typ.) Read ( at 5V ) :0.2mA(typ.) Standby ( at 5V ) :0.1A(typ.) DATA security Write protect feature (WP pin) Inhibit to WRITE at low Vcc TSSOP-B8 3.00mm x 6.40mm x 1.20mm High reliability fine pattern CMOS technology Rewriting possible up to 1,000,000 times Data retention: 40 years Noise reduction Filtered inputs in SCL / SDA Initial data FFh at all addresses BR34L02-W Capacity Bit format Type Power Source Voltage SSOP-B8 TSSOP-B8 2Kbit 256 x 8 BR34L02-W 1.7V to 5.5V Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remarks Supply Voltage Vcc -0.3 to +6.5 V 300 (SSOP-B8) Reduce by 3.0mW/C over 25C Power Dissipation Pd mW 330 (TSSOP-B8) Reduce by 3.3mW/C over 25C Tstg Storage Temperature -65 to +125 Topr Operating Temperature -40 to +85 Terminal Voltage - -0.3 to Vcc+0.3 V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100380-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/27 TSZ2211114001 27.Aug.2012 Rev.001Datasheet BR34L02-W Memory Cell Characteristics(Ta=25, Vcc=1.7V to 5.5V) Specification Parameter Unit Min. Typ. Max. *1 Write / Erase Cycle 1,000,000 - - Times *1 Data Retention 40 - - Years *1: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc 1.7 to 5.5 V Input Voltage VIN 0 to Vcc V Electrical Characteristics DC(Unless otherwise specified Ta=-40 to +85, Vcc=1.7V to 5.5V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage 1 VIH1 0.7 Vcc - - V 2.5VVcc5.5V Input Voltage 1 VIL1 - - 0.3 Vcc V 2.5VVcc5.5V Input Voltage 2 VIH2 0.8 Vcc - - V 1.7VVcc2.5V Input Voltage 2 VIL2 - - 0.2 Vcc V 1.7VVcc2.5V Output Voltage 1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V(SDA) Output Voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7VVcc2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 A VIN=0V to Vcc(A0,A1,A2,SCL) Input Leakage Current 2 ILI2 -1 - 15 A VIN=0V to Vcc(WP) Output Leakage Current ILO -1 - 1 A VOUT=0V to Vcc(SDA) Vcc=5.5V, fSCL=400kHz, tWR=5ms Byte Write ICC1 - - 2.0 mA Page Write Write Protect Operating Current Vcc=5.5V, fSCL=400kHz Random Read ICC2 - - 0.5 mA Current Read Sequential Read Vcc=5.5V, SDA,SCL= Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND, WP=GND AC(Unless otherwise specified Ta=-40 to +85, Vcc =1.7V to 5.5V) FAST-MODE STANDARD-MODE 2.5VVcc5.5V 1.7VVcc5.5V Parameter Symbol Unit Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.2 - - 4.7 - - s *1 SDA and SCL Rise Time tR - - 0.3 - - 1.0 s *1 SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 50 - - 50 - - ns Output Data Delay Time tPD 0.1 - 0.9 0.2 - 3.5 s Output Data Hold Time tDH 0.1 - - 0.2 - - s Stop Condition Setup Time tSU:STO 0.6 - - 4.7 - - s Bus Free Time tBUF 1.2 - - 4.7 - - s Write Cycle Time tWR - - 5 - - 5 ms Noise Spike Width (SDA and SCL) tI - - 0.1 - - 0.1 s WP Hold Time tHDWP 0 - - 0 - - ns WP Setup Time tSUWP 0.1 - - 0.1 - - s WP High Period tHIGHWP 1.0 - - 1.0 - - s *1Not 100 TESTED www.rohm.com TSZ02201-0R2R0G100380-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/27 TSZ2211115001 27.Aug.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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