Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34L02-W General Description BR34L02-W is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features Packages W(Typ.) x D(Typ.) x H(Max.) 2568 bit architecture serial EEPROM Wide operating voltage range: 1.7V-5.5V Two-wire serial interface High reliability connection using Au pads and Au wires Self-Timed Erase and Write Cycle Page Write Function (16byte) Write Protect Mode SSOP-B8 3.00mm x 6.40mm x 1.35mm Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption Write ( at 5V ) :1.2mA (typ.) Read ( at 5V ) :0.2mA(typ.) Standby ( at 5V ) :0.1A(typ.) DATA security Write protect feature (WP pin) Inhibit to WRITE at low Vcc TSSOP-B8 3.00mm x 6.40mm x 1.20mm High reliability fine pattern CMOS technology Rewriting possible up to 1,000,000 times Data retention: 40 years Noise reduction Filtered inputs in SCL / SDA Initial data FFh at all addresses BR34L02-W Capacity Bit format Type Power Source Voltage SSOP-B8 TSSOP-B8 2Kbit 256 x 8 BR34L02-W 1.7V to 5.5V Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remarks Supply Voltage Vcc -0.3 to +6.5 V 300 (SSOP-B8) Reduce by 3.0mW/C over 25C Power Dissipation Pd mW 330 (TSSOP-B8) Reduce by 3.3mW/C over 25C Tstg Storage Temperature -65 to +125 Topr Operating Temperature -40 to +85 Terminal Voltage - -0.3 to Vcc+0.3 V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100380-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/27 TSZ2211114001 27.Aug.2012 Rev.001Datasheet BR34L02-W Memory Cell Characteristics(Ta=25, Vcc=1.7V to 5.5V) Specification Parameter Unit Min. Typ. Max. *1 Write / Erase Cycle 1,000,000 - - Times *1 Data Retention 40 - - Years *1: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage Vcc 1.7 to 5.5 V Input Voltage VIN 0 to Vcc V Electrical Characteristics DC(Unless otherwise specified Ta=-40 to +85, Vcc=1.7V to 5.5V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage 1 VIH1 0.7 Vcc - - V 2.5VVcc5.5V Input Voltage 1 VIL1 - - 0.3 Vcc V 2.5VVcc5.5V Input Voltage 2 VIH2 0.8 Vcc - - V 1.7VVcc2.5V Input Voltage 2 VIL2 - - 0.2 Vcc V 1.7VVcc2.5V Output Voltage 1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V(SDA) Output Voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7VVcc2.5V(SDA) Input Leakage Current 1 ILI1 -1 - 1 A VIN=0V to Vcc(A0,A1,A2,SCL) Input Leakage Current 2 ILI2 -1 - 15 A VIN=0V to Vcc(WP) Output Leakage Current ILO -1 - 1 A VOUT=0V to Vcc(SDA) Vcc=5.5V, fSCL=400kHz, tWR=5ms Byte Write ICC1 - - 2.0 mA Page Write Write Protect Operating Current Vcc=5.5V, fSCL=400kHz Random Read ICC2 - - 0.5 mA Current Read Sequential Read Vcc=5.5V, SDA,SCL= Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND, WP=GND AC(Unless otherwise specified Ta=-40 to +85, Vcc =1.7V to 5.5V) FAST-MODE STANDARD-MODE 2.5VVcc5.5V 1.7VVcc5.5V Parameter Symbol Unit Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.2 - - 4.7 - - s *1 SDA and SCL Rise Time tR - - 0.3 - - 1.0 s *1 SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 50 - - 50 - - ns Output Data Delay Time tPD 0.1 - 0.9 0.2 - 3.5 s Output Data Hold Time tDH 0.1 - - 0.2 - - s Stop Condition Setup Time tSU:STO 0.6 - - 4.7 - - s Bus Free Time tBUF 1.2 - - 4.7 - - s Write Cycle Time tWR - - 5 - - 5 ms Noise Spike Width (SDA and SCL) tI - - 0.1 - - 0.1 s WP Hold Time tHDWP 0 - - 0 - - ns WP Setup Time tSUWP 0.1 - - 0.1 - - s WP High Period tHIGHWP 1.0 - - 1.0 - - s *1Not 100 TESTED www.rohm.com TSZ02201-0R2R0G100380-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/27 TSZ2211115001 27.Aug.2012 Rev.001