X-On Electronics has gained recognition as a prominent supplier of BR93A56RFVT-WME2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR93A56RFVT-WME2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR93A56RFVT-WME2 ROHM

BR93A56RFVT-WME2 electronic component of ROHM
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Part No.BR93A56RFVT-WME2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Memory IC 2Kb (128 x 16) SPI 2 MHz 8-TSSOP-B
Datasheet: BR93A56RFVT-WME2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.7017 ea
Line Total: USD 2105.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7017
6000 : USD 0.6518
15000 : USD 0.6304

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9934
10 : USD 0.8665
25 : USD 0.8551
50 : USD 0.8495
100 : USD 0.7597
250 : USD 0.7533
500 : USD 0.7421
1000 : USD 0.7156

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9934
10 : USD 0.8665
25 : USD 0.8551
50 : USD 0.8495
100 : USD 0.7597
250 : USD 0.7533
500 : USD 0.7421
1000 : USD 0.7156

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4785
6000 : USD 0.4785
9000 : USD 0.4785
24000 : USD 0.4774

   
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We are delighted to provide the BR93A56RFVT-WME2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR93A56RFVT-WME2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Automotive EEPROM 105 Operation Microwire BUS EEPROM (3-Wire) BR93Axx-WM (1K 2K 4K 8K 16K) General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. Features Packages W(Typ.) x D(Typ.) x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Wide temperature range -40 to +105 Operations available at high speed 2MHz clock(2.5V to 5.5V) Speed write available (write time 5ms max.) Same package and pin layout from 1Kbit to 16Kbit 2.5V to 5.5V single power source operation SOP- J8 SOP8 Address auto increment function at read operation 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption TSSOP-B8 MSOP8 At write operation (at 5V) : 1.2mA (Typ.) 3.00mm x 6.40mm x 1.20mm 2.90mm x 4.00mm x 0.90mm At read operation (at 5V) : 0.3mA (Typ.) At standby condition (at 5V) : 0.1A (Typ.)(CMOS input) TTL compatible (input / output s) Data retention for 40 years(Ta25) Endurance up to 1,000,000 times(Ta25) Data at shipment all addresses FFFFh AEC-Q100 Qualified BR93Axx-WM Package type SOP8 SOP-J8 TSSOP-B8 MSOP8 Power source Capacity Bit format Type F RF FJ RFJ RFVT RFVM voltage 1Kbit 6416 BR93A46-WM 2.5V to 5.5V 2Kbit 12816 BR93A56-WM 2.5V to 5.5V 4Kbit 25616 BR93A66-WM 2.5V to 5.5V 8Kbit 51216 BR93A76-WM 2.5V to 5.5V 16Kbit 1K16 BR93A86-WM 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100150-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 6.Nov.2013 Rev.003DatasheetDatasheet BR93Axx-WM (1K 2K 4K 8K 16K) Absolute Maximum Ratings (Ta=25) Parameter Symbol Limits Unit Remarks Supply voltage VCC -0.3 to +6.5 V When using at Ta=25 or higher, 4.5mW to be reduced per 1. 0.45 (SOP8) When using at Ta=25 or higher, 4.5mW to be reduced per 1. 0.45 (SOP-J8) Permissible Pd W dissipation When using at Ta=25 or higher, 3.3mW to be reduced per 1. 0.33 (TSSOP-B8) 0.31 (MSOP8) When using at Ta=25 or higher, 3.1mW to be reduced per 1. Storage temperature range Tstg -65 to +125 Operating temperature range Topr -40 to +105 Terminal voltage -0.3 to VCC+0.3 V Memory Cell Characteristics (VCC=2.5V to 5.5V) Limit Parameter Unit Condition Min. Typ. Max. 1,000,000 - - Ta25 550,000 Ta60 *1 Endurance Times 200,000 Ta85 100,000 - - Ta105 40 - - Ta25 *1 Data retention Years 10 - - Ta105 Shipment data all address FFFFh *1Not 100 TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Power source voltage VCC 2.5 to 5.5 V Input voltage VIN 0 to VCC Electrical Characteristics (Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40to +105) Limits Parameter Symbol Unit Condition Min. Typ. Max. L input voltage 1 VIL1 -0.3 - 0.8 V 4.0VVCC5.5V L input voltage 2 VIL2 -0.3 - 0.2 x VCC V VCC4.0V H input voltage 1 VIH1 2.0 - VCC+0.3 V 4.0VVCC5.5V H input voltage 2 VIH2 0.7 x VCC - VCC+0.3 V VCC4.0V L output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0VVCC5.5V L output voltage 2 VOL2 0 - 0.2 V IOL=100A H output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0VVCC5.5V H output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100A Input leak current ILI -1 - 1 A VIN=0V to VCC Output leak current ILO -1 - 1 A VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE) Current consumption ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL) Standby current ISB - - 2 A CS=0V, DO=OPEN www.rohm.com TSZ02201-0R1R0G100150-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211115001 6.Nov.2013 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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