BR93G66FVM-3BGTTR ROHM

Datasheet Serial EEPROM series Standard EEPROM Micr oWire BUS EEPROM (3-Wire) BR93G66-3B General Description BR93G66-3B is serial EEPROM of Serial 3-Line Interface Method. They are 16bit organization and CS PIN is the third PIN in their PIN configuration. Features Packages W(Typ) x D(Typ)x H(Max) 3-Line Communications of chip select, serial clock, serial data input / output (the case where input and Not Recommended for output are shared) New Designs Operations available at High Speed 3MHz clock (4.5V to 5.5V) DIP-T8 TSSOP-B8 High Speed Write available (write time 5ms Max) 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm Same package and pin configuration from 1Kbit to 16Kbit 1.7V to 5.5V Single Power Source Operation Address Auto Increment function at Read Operation Write Error Prevention Function SOP8 TSSOP-B8J Write Prohibition at Power On 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write Prohibition by Command Code Write Error Prevention Function at Low Voltage Self-timed Programming Cycle Program Condition Display by READY / BUSY Compact Package SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 SOP- J8 MSOP8 TSSOP-B8J VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm More than 40 years data retention More than 1 million write cycles Initial Delivery State all addresses FFFFh (X16) SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm BR93G66-3B Power Source VSON008 (1) DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 Capacity Bit Format Type Voltage X2030 4Kbit 25616 BR93G66-3B 1.7V to 5.5V (1) DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays. www.rohm.com TSZ02201-09190G100060-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.004 BR 9 3 G 6 6 - 3 B Absolute Maximum Ratings Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C Permissible Pd mW Dissipation 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C Storage Tstg -65 to +150 C Temperature Operating Topr -40 to +85 C Temperature The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature (1) Not Recommended for New Designs. Memory Cell Characteristics (Vcc=1.7V to 5.5V) Limit Parameter Unit Conditions Min Typ Max (2) Write Cycles 1,000,000 - - Times Ta=25C (2) Data Retention 40 - - Years Ta=25C Initial data in all addresses are FFFFh(X16) upon delivery. (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limit Unit Supply Voltage VCC 1.7 to 5.5 V Input Voltage VIN 0 to VCC www.rohm.com TSZ02201-09190G100060-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 11.Jun.2019 Rev.004 TSZ22111 15 001