BR93G76FVT-3BGE2 ROHM

Datasheet Serial EEPROM series Standard EEPROM Micr oWire BUS EEPROM (3-Wire) BR93G76-3B General Description BR93G76-3B is serial EEPROM of serial 3-line Interface method. They are 16bit organization and CS PIN is the third PIN in their PIN configuration. Features Packages W(Typ.) x D(Typ.)x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Not Recommended for Operations available at high speed 3MHz clock New Designs (4.5V ~ 5.5V) High speed write available (write time 5ms max.) DIP-T8 TSSOP-B8 Same package and pin configuration from 1Kbit to 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 16Kbit 1.7~5.5V single power source operation Address auto increment function at read operation Write mistake prevention function Write prohibition at power on SOP8 TSSOP-B8J Write prohibition by command code 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write mistake prevention function at low voltage Self-timed programming cycle Program condition display by READY / BUSY Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/ TSSOP-B8J/VSON008X2030 SOP- J8 MSOP8 More than 40 years data retention 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm More than 1 million write cycles Initial delivery state all addresses FFFFh SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm BR93G76-3B Power source VSON008 *1 Capacity Bit format Type DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 X2030 voltage 8Kbit 51216 BR93G76-3B 1.7~5.5V *1 DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-09190G100090-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.002 BR 9 3 G 7 6 - 3 B Absolute Maximum Ratings Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V *1 When using at Ta=25C or higher 8.0mW to be reduced per 1C. 800 (DIP-T8 ) 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 300 (SSOP-B8) When using at Ta=25C or higher 3.0mW to be reduced per 1C. Permissible Pd mW dissipation 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. 310 (TSSOP-B8J) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. Storage Tstg -65 to +150 C temperature Operating Topr -40 to +85 C temperature The Max value of lnput voltage/Output voltage is not over 6.5V. Input voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output voltage voltage/Output voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition temperature *1 Not Recommended for New Designs. Memory cell characteristics (VCC=1.7~5.5V) Limit Parameter Unit Condition Min. Typ. Max. *2 Write cycles 1,000,000 - - Times Ta=25C *2 Data retention 40 - - Years Ta=25C Shipment data all address FFFFh *2 Not 100% TESTED Recommended Operation Ratings Parameter Symbol Limits Unit Supply voltage VCC 1.7~5.5 V Input voltage VIN 0~VCC www.rohm.com TSZ02201-09190G100090-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 11.Jun.2019 Rev.002 TSZ22111 15 001