Datasheet Serial EEPROM Standard EEPROM WLCSP EEPROM BU9832GUL-W (8Kbit) General Description BU9832GUL-W is a serial EEPROM of SPI BUS interface method. Features High speed clock action up to 5MHz (Max.) Wait function by HOLD terminal. Part or whole of memory arrays settable as read only memory area by program. 1.8 to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Auto erase and auto end function at data rewrite. Low current consumption At write action (5V) : 1.5mA (Typ.) At read action (5V) : 1.0mA (Typ.) At standby action (5V) : 0.1A (Typ.) Address auto increment function at read action Write mistake prevention function Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WP pin. Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage. Compact package W(Typ.) x D(Typ.) x H(Max.) : 2.09mm x 1.85mm x 0.55mm Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 Data kept for 40 years. Data rewrite up to 1,000,000times. Page write Product number Number of pages BU9832GUL-W 32 Byte BU9832GUL-W Power source Type Capacity Bit format Package voltage BU9832GUL-W 8Kbit 1K8 1.8V to 5.5V VCSP50L2 Product structure:Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100410-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/26 TSZ2211114001 30.AUG.2012 Rev.001DatasheetDatasheet BU9832GUL-W (8Kbit) Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Impressed voltage Vcc -0.3 to +6.5 V When using at Ta=25 or higher, 220mW to be reduced per 1 Permissible dissipation Pd 220(VCSP50L2) mW Storage Temperature range Tstg -65 to +125 Operating Temperature range Topr -40 to +85 Terminal voltage -0.3 to Vcc+0.3 V Memory cell characteristics (Ta=25, Vcc=1.8V to 5.5V) Limits Parameter Unit Min. Typ. Max *1 Number of data rewrite times 1,000,000 Times *1 Data hold years 40 Years *1 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power source voltage Vcc 1.8 to 5.5 V Input voltage VIN 0 to Vcc Input / output capacity (Ta=25, frequency=5MHz) Limits Parameter Symbol Unit Conditions Min. Max *1 Input capacity C 8 pF V =GND IN IN *1 Output capacity C 8 pF V =GND OUT OUT *1 : Not 100% TESTED Electrical characteristics (Unless otherwise specified, Ta=-40 to +85, Vcc=1.8V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. H input voltage 1 VIH1 0.7xVcc Vcc+0.3 V 1.8Vcc5.5V L input voltage 1 VIL1 -0.3 0.3xVcc V 1.8Vcc5.5V L output voltage 1 VOL1 0 0.4 V IOL=2.1mA(Vcc=2.5V to 5.5V) L output voltage 2 VOL2 0 0.2 V IOL=150A(Vcc=1.8V to 2.5V) H output voltage 1 VOH1 Vcc-0.5 Vcc V IOH=-0.4mA(Vcc=2.5V to 5.5V) H output voltage 2 VOH2 Vcc-0.2 Vcc V IOH=-100A(Vcc=1.8V to 2.5V) Input leak current ILI -1 1 A VIN=0 to Vcc Output leak current ILO -1 1 A VOUT=0 to Vcc, CS =Vcc Vcc=1.8V, fSCK=2MHz, tE/W=5ms ICC1 1.0 mA Byte write, Page write, Write status register Vcc=2.5V, fSCK=5MHz, tE/W=5ms Current consumption ICC2 2.0 mA Byte write, Page write, Write status at write action register Vcc=5.5V, fSCK=5MHz, tE/W=5ms ICC3 3.0 mA Byte write, Page write, Write status register Vcc=2.5V, fSCK=5MHz ICC4 1.5 mA Current consumption Read, Read status register at read action Vcc=5.5V,fSCK=5MHz ICC5 2.0 mA Read, Read status register Standby current ISB 2 A Vcc=5.5V, CS=HOLD=WP=VCC SCK=SI=Vcc or=GND,SO=OPEN www.rohm.com TSZ02201-0R2R0G100410-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 30.AUG.2012 Rev.001