Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM(3-Wire) BU9888FV-W General Description BU9888FV-W is a serial EEPROM of serial 3-line interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) 256word16bits architecture 4k bit serial EEPROM Operating voltage range(3.0V to 3.6V) Write Cycle time tE/W=2ms(Max) Address auto increment function at read action Write mistake prevention function Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display READY / BUSY Low current consumption SSOP-B8 At write action(3.6V): Icc1 = 3.5mA(Max.) 3.00mm x 6.40mm x 1.35mm At read action(3.6V): Icc2 = 2.0mA(Max.) At standby action (3.6V): ISB = 2.0A(Max.) Data retention for 40 years Data rewrite up to 100,000 times Data at shipment all addresses FFFFh Absolute Maximum Ratings (Ta=25) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC Degradation is done at 3.0mW/ for operation above 25 Power Dissipation Pd 300 mW Storage Temperature Tstg -65 to +125 Operating Temperature Topr -20 to +85 Terminal Voltage -0.3 to V +0.3 V The Max value of Terminal Voltage is not over 6.5V CC Memory cell characteristics(Ta=25, V = 3.0V to 3.6V) CC Limits Parameter Unit Min. Typ. Max. Erase/Write Cycle *1 100,000 Cycles Data Retention *1 40 Years *1 Not 100 TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply Voltage V 3.0 to 3.6 CC V Input Voltage VIN 0 to V CC Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www .rohm.com TSZ02201-0R2R0G100460-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/21 TSZ2211114001 10.SEP.2012 Rev.001DatasheetDatasheet BU9888FV-W Electrical Characteristics -DC Operating (Unless otherwise specified Ta=-20 to +85, V =3.0V to 3.6V) CC Limits Parameter Symbol Unit Test Condition Min. Typ. Max. Input Voltage VIL -0.3 0.2V V CC Input Voltage VIH 0.8V V +0.3 V CC CC Output Voltage VOL 0 0.4 V IOL=2.1mA Output Voltage VOH 2.4 V V IOH=-0.4mA CC Input Leakage Current ILI -1 1 A VIN=0 to V CC Output Leakage Current ILO -1 1 A VOUT=0 to V , CS=0V CC fSK=2MHz, tE/W=2ms(WRITE), ICC1 3.5 mA TEST1=Vcc Operating Current ICC2 2.0 mA fSK=2MHz, (READ), TEST1=V CC Standby Current ISB 2.0 A CS=0V, TEST1=V , DO=OPEN CC Electrical Characteristics -AC Operating (Ta=-20 to +85, Vcc = 3.0V to 3.6V) Limits Parameter Symbol Unit Min. Typ. Max. SK Clock Frequency fSK 2 MHz SK High Time tSKH 230 ns SK Low Time tSKL 230 ns CS Low Time tCS 200 ns CS Setup Time tCSS 200 ns DI Setup Time tDIS 100 ns CS Hold Time tCSH 0 ns DI Hold Time tDIH 100 ns Data1 Output Delay Time tPD1 200 ns Data0 Output Delay Time tPD0 200 ns CS to Status Valid tSV 150 ns CS to Output High-Z tDF 150 ns Write Cycle time tE/W 2 ms Sync Data Input / Output Timing CS tCSS tSKH tSKL tCSH SK tDIS tDIH DI tPD1 tPD0 DO(READ) tDF STATUS VALID DO(WRITE) Figure 1. Sync data input / output timing Data is taken by DI in sync with the rise of SK. At read action, data is output from DO in sync with the rise of SK. The status signal at write (READY / BUSY ) is output after tCS from the fall of CS after write command input, at the area DO where CS is H, and valid until the next command start bit is input. And, while CS is L, DO becomes High-Z. After completion of each mode execution, set CS L once for internal circuit reset, and execute the following action mode. www.rohm.com TSZ02201-0R2R0G100460-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/21 TSZ2211115001 10.SEP.2012 Rev.001