DA228UFHT106 ROHM

Data Sheet AEC-Q101 Qualified Switching Diode DA228UFH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra high speed switching 1.3 2.0 0.2 0.3 0.1 Each lead has same dimension 0.15 0.05 (3) 0.65 Features 1) Ultra small mold type. (UMD3) 2) High reliability. 0 0.1 0.8MIN (2) (1) UMD3 0.65 0.65 0.7 0.1 1.3 0.1 0.9 0.1 Construction Structure Silicon epitaxial planar ROHM : UMD3 (1)D2:C (2)D1:A JEDEC : SOT-323 (3)D1:C D2:A JEITA : SC-70 dot (year week factory) Taping specifications (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 80 V RM Reverse voltage (DC) V 80 V R Forward current (Single) I 200 mA FM Average rectified forward current (Single) Io 100 mA Surge current (t=1us) (Single) I 300 mA surge Power dissipation 200 Pd mW/Total Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Rated in slash put frequency 100 f MHz Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.2 V I =100mA F F Reverse current I - - 0.1 A V =80V R R Ct32 - - 5.0 pF Capacitance between terminals V =0V , f=1MHz Ct13 - - 6.5 pF R Ct12 - - 5.0 pF www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 1 .25 0. 1 2.10.1 0.1Min 2.40.1 0.9MIN. 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6Data Sheet DA228UFH 100 100 100 Ta=150 Ta=75 D2 Ta=125 D1 D1 10 Ta=75 Ta=125 1 Ta=-25 Ta=125 10 10 Ta=75 Ta=-25 0.1 Ta=150 Ta=25 Ta=150 Ta=25 Ta=25 0.01 1 1 0.001 Ta=-25 0.0001 0.1 0.00001 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 100 200 300 400 500 600 700 800 900 1000 1100 0 10203040 5060 70 80 FORWARD VOLTAGEVF(mV) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS Ta=150 Ta=125 10 10 100 D2 Ct13 f=1MHz f=1MHz Ct32 10 Ta=75 1 Ta=25 1 1 0.1 0.01 Ta=-25 0.001 0.1 0.1 0.0001 012 3456 789 10 012345678 9 10 0 1020 304050607080 REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS VR-Ct CHARACTERISTICS 10 1060 990 Ta=25 Ta=25 f=1MHz Ct12 D2 D1 IF=100mA IF=100mA 1050 n=30pcs n=30pcs 980 1040 970 1 960 1030 950 1020 AVE:961.5mV AVE:1035.0mV 940 1010 0.1 0 123 45 67 89 10 REVERSE VOLTAGE:VR(V) VF DISPERSION MAP VF DISPERSION MAP VR-Ct CHARACTERISTICS 1 10 5 Ta=25 Ta=25 Ta=25 0.9 9 D2 D1 Ct32 VR=15V VR=15V VR=0V 0.8 n=30pcs 8 4 n=30pcs f=1MHz n=10pcs 0.7 7 0.6 6 3 AVE:3.34pF 0.5 5 0.4 4 2 AVE:0.1065nA 0.3 3 AVE:0.620nA 0.2 2 1 0.1 1 0 0 0 IR DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) CAPACITANCE BETWEEN REVERSE CURRENT:IR(nA) TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) TERMINALS:Ct(pF)