X-On Electronics has gained recognition as a prominent supplier of PTZTE254.7A Zener Diodes across the USA, India, Europe, Australia, and various other global locations. PTZTE254.7A Zener Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

PTZTE254.7A ROHM

PTZTE254.7A electronic component of ROHM
PTZTE254.7A ROHM
PTZTE254.7A Zener Diodes
PTZTE254.7A  Semiconductors

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Part No. PTZTE254.7A
Manufacturer: ROHM
Category: Zener Diodes
Description: Zener Diodes 4.7V 40MA
Datasheet: PTZTE254.7A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.208 ea
Line Total: USD 312 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 0.208
3000 : USD 0.2054
4500 : USD 0.1962
6000 : USD 0.195
7500 : USD 0.1912

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Pd - Power Dissipation
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We are delighted to provide the PTZTE254.7A from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PTZTE254.7A and other electronic components in the Zener Diodes category and beyond.

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PTZ4.7B Diodes Zener diode PTZ4.7B z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) Voltage regulation z Features 1) Small power mold type. (PMDS) 2) High ESD tolerance z Construction Silicon epitaxial planar z Structure z Taping dimensions (Unit : mm) z Absolute maximum ratings (Ta=25q C) Parameter Limits Symbol Unit Power dissipation 1000 Pm W Junction tem perature Tj 150 Storage tem perature -55 to +150 Tstg Rev.E 1/4 PTZ4.7B Diodes z Electrical characteristics (Ta=25q C) Symbol Operating Temperature Reverse current ESD breakdown voltage coeficiency TYP. Zener voltage Vz(V) resistance IR( A) ESD(kV) Zz( ) * z(mV/ ) MIN. TYP. MAX. Iz(mA) Max. Iz(mA) MAX. VR(V) TYP. Iz(mA) MIN. Test Condition PTZ 3.6B 3.600 3.813 4.000 40 15 40 60 1.0 -2.8 40 PTZ 3.9B 3.900 4.136 4.400 40 15 40 40 1.0 -2.4 40 PTZ 4.3B 4.300 4.572 4.800 40 15 40 20 1.0 -2.1 40 PTZ 4.7B 4.700 4.924 5.200 40 10 40 20 1.0 -1.7 40 PTZ 5.1B 5.100 5.368 5.700 40 8 40 20 1.0 -0.6 40 PTZ 5.6B 5.600 5.856 6.300 40 8 40 20 1.5 1.4 40 PTZ 6.2B 6.200 6.509 7.000 40 6 40 20 3.0 2.5 40 PTZ 6.8B 6.800 7.280 7.700 40 6 40 20 3.5 3.2 40 PTZ 7.5B 7.500 7.889 8.400 40 4 40 20 4.0 4.2 40 PTZ 8.2B 8.200 8.655 9.300 40 4 40 20 5.0 5.0 40 C=150pF PTZ 9.1B 9.100 9.747 10.200 40 6 40 20 6.0 5.9 40 R=330 PTZ 10B 10.000 10.310 11.200 40 6 40 10 7.0 6.9 40 forward 30kV PTZ 11B 11.000 11.510 12.300 20 8 20 10 8.0 7.9 20 and PTZ 12B 12.000 12.500 13.500 20 8 20 10 9.0 8.7 20 reverse: PTZ 13B 13.300 13.820 15.000 20 10 20 10 10.0 10.1 20 10 times PTZ 15B 14.700 15.350 16.500 20 10 20 10 11.0 11.8 20 PTZ 16B 16.200 16.860 18.300 20 12 20 10 12.0 13.3 20 PTZ 18B 18.000 19.000 20.300 20 12 20 10 13.0 15.0 20 PTZ 20B 20.000 20.820 22.400 20 14 20 10 15.0 17.4 20 PTZ 22B 22.000 23.850 24.500 10 10 10 17.0 19.4 10 PTZ 24B 24.000 25.310 27.600 10 10 10 19.0 21.6 10 PTZ 27B 27.000 28.700 30.800 10 10 10 21.0 24.6 10 PTZ 30B 30.000 31.570 34.000 10 10 10 23.0 27.5 10 PTZ 33B 33.000 34.950 37.000 10 10 10 25.0 30.8 10 PTZ 36B 36.000 39.240 40.000 10 10 10 27.0 37.0 10 () The zener voltage(Vz) is measured 40ms after power is supplied. () The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz) z Marking (TYPE NO.) TYPE TYPE TYPE TYPE NO. TYPE NO. PTZ 3.6B 3.6B PTZ 8.2B 8.2B PTZ 20B 20B PTZ 3.9B 3.9B PTZ 9.1B 9.1B PTZ 22B 22B PTZ 4.3B 4.3B PTZ 10B 10B PTZ 24B 24B PTZ 4.7B PTZ 11B PTZ 27B 4.7B 11B 27B PTZ 5.1B 5.1B PTZ 12B 12B PTZ 30B 30B PTZ 5.6B PTZ 13B PTZ 33B 5.6B 13B 33B PTZ 6.2B 6.2B PTZ 15B 15B PTZ 36B 36B PTZ 6.8B PTZ 16B 6.8B 16B PTZ 7.5B 7.5B PTZ 18B 18B Rev.E 2/4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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