RB068L-40DDTE25 ROHM

Schottky Barrier Diode RB068L-40DD Datasheet AEC-Q101 Qualified Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 2.0 2.60.2 Features 1)Small power mold type. (PMDS) 2 7 2)Ultra Low I R 0.10.02 3)High reliability 0.1 PMDS 2.00.2 1.50.2 Structure Silicon epitaxial planer Structure ROHM : PMDS JEDEC : SOD-106 dot (year week factory) Taping dimensions (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 40 V RM Reverse voltage (DC) V 40 V R Average rectified forward current (*1) 2 Io A Forward current surge peak (60Hz1cyc) I 50 A FSM Junction temperature 125 Tj C Storage temperature Tstg 40 to 150 C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.69 V I =2.0A F F V =40V Reverse current I -- 1 A R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.11 - Rev.C 1/4 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 2.0 5.50.05 1.750.1 120.2 4.2Data Sheet RB068L-40DD 10000 1000 Ta=150 C Ta=150 C 100 Ta=125 C 1000 10 Ta=75 C Ta=125 C Ta=75 C 100 Ta=25 C 1 10 0.1 Ta=25 C Ta=25 C 1 0.01 0.1 0.001 0 100 200 300 400 500 600 700 010 20 30 40 REVERSE VOLTAGEV (V) FORWARD VOLTAGEV (mV) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 700 f=1MHz Ta=25 C 680 I =2A F n=30pcs 660 100 640 620 600 10 AVE:621.1mV 580 560 540 1 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 100 600 Ta=25 C 90 Ta=25 C f=1MHz V =40V R 80 V =0V n=30pcs 500 R n=10pcs 70 60 400 50 40 300 AVE:55.667nA 30 AVE:328.0pF 20 200 10 0 100 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.11 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (mA) F REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F REVERSE CURRENT:I ( A) R