Semiconductor. These series of Schottky Barrier Diodes are made of rectifying elements integrated with the MOS structure technology. This technology allows for improved characteristics, such as low forward voltage drop, high reliability, and wide temperature range. It can be used in wide power supply/voltage range (100V~250V) and automotive applications. The RB510SM-30T2R is a power rectifier with a 30A rating, a forward voltage of 1.1V (max. @ 25 °C) and a reverse voltage of 150V (max. @ 25 °C). It also has a low leakage current, low power losses, and fast switching speed. This part is suitable for smart phones, tablets, PDAs, and other digital devices.