RB551V-30TE-17 ROHM

Schottky Barrier Diode RB551V-30 Datasheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) High frequency rectification 1.250.1 0.10.1 0.9MIN. 0.05 lFeatures 1) Small mold type. (UMD2) UMD2 2) Low V F 3) High reliability. lStructure Cathode 0.70.2 0.30.05 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lConstruction Anode Silicon epitaxial planar lTaping specifications (Unit : mm) 1.550.05 0.30.1 f1.550.05 2.00.05 4.00.1 1.400.1 4.00.1 1.05 f1.05 1.00.1 lAbsolute maximum ratings (Ta= 25C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) V 30 V RM V 20 Reverse voltage (DC) V R 500 Average rectified forward current Io mA Forward current surge peak (60Hz1cyc) I 2 A FSM Junction temperature Tj 125 C Storage temperature Tstg -40 to +125 C lElectrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 I =100mA - - 0.36 V F F Forward voltage V 2 I =500mA - - 0.47 V F F I V =20V Reverse current - - 100 mA R R www.rohm.com 201 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.E 1/5 Not Recommended for New Designs 1.70.1 2.50.2 3.50.05 1.750.1 2.75 0.8MIN. 8.00.2 2.80.1 2.1Data Sheet RB551V-30 lElectrical characteristic curves 1000 100000 Tj = 125 C Tj = 125 C Tj = 75 C 10000 100 Tj = 75 C 1000 10 100 Tj = 25 C 10 1 Tj = 25 C Tj = -25 C 1 Tj = -25 C 0.1 0.1 0 100 200 300 400 500 600 0 10 20 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 450 f = 1MHz Tj=25 C I =500mA F 440 n=30pcs AVE : 420.4mV 430 10 420 410 400 1 0 10 20 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 201 ROHM Co., Ltd. All rights reserved. 2015.01 - Rev.E 2/5 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R