RBQ10T45ANZC9 ROHM

Anode Cathode Anode Schottky Barrier Diode RBQ10T45ANZ Data Sheet lApplication lDimensions (Unit : mm) lStructure 4.50.3 General rectification 0.1 2.80.2 10.00.3 0.1 0.1 lFeatures 1) Cathode common type. 2) Low I R 1 3) High reliability 1.2 1.3 0.8 lConstruction (1) (2) (3) 0.70.1 2.60.5 0.05 Silicon epitaxial planar ROHM TO220FN 1 Manufacture Date lPackage Dimensions (Unit : mm) 7 540 lAbsolute maximum ratings (Tc= 25C) Parameter Symbol Limits Unit V 45 Reverse voltage (repetitive) V RM Reverse voltage (DC) V 45 V R Average rectified forward current (*1) Io 10 A I 50 Forward current surge peak (60Hz1cyc) A FSM 150 Junction temperature Tj C Storage temperature Tstg -40 to +150 C (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj = 25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward voltage - - 0.65 V F F I V =45V Reverse current - - 150 mA R R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/5 34.5 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RBQ10T45ANZ lElectrical characteristic curves 10 100000 Ta = 150 C Ta = 125 C 10000 Ta = 150 C 1000 1 Ta = 125 C Ta = 75 C 100 Ta = 75 C Ta = 25 C 10 0.1 Ta = 25 C 1 Ta = -25 C 0.1 Ta = -25 C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 10 20 30 40 50 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 600 f = 1MHz Ta=25 C 590 I =5A F 580 n=30pcs 570 100 AVE : 551.3mV 560 550 540 10 530 520 510 1 500 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R