X-On Electronics has gained recognition as a prominent supplier of RBQ30NS45AFHTL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RBQ30NS45AFHTL Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

RBQ30NS45AFHTL ROHM

RBQ30NS45AFHTL electronic component of ROHM
RBQ30NS45AFHTL ROHM
RBQ30NS45AFHTL Schottky Diodes & Rectifiers
RBQ30NS45AFHTL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RBQ30NS45AFHTL
Manufacturer: ROHM
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 45V Vr 30A Io SBD TO-263S(D2PAK) 15A
Datasheet: RBQ30NS45AFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1787 ea
Line Total: USD 2.18 
Availability - 6
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 2.1787
10 : USD 1.4868
100 : USD 1.0695
500 : USD 0.8755
1000 : USD 0.7935
2000 : USD 0.7623

   
Manufacturer
Product Category
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Qualification
Packaging
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Case Style
No Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RBQ30NS45AFHTL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RBQ30NS45AFHTL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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RBQ30NS45AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 45 V R I 30 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ30NS45A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 45 V RM Reverse voltage V Reverse direct voltage 45 V R 60Hz half sin waveformresistive load Average rectified forward current I 30 A o I /2 per diodeT =100Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBQ30NS45AFH Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =15A - 0.56 0.65 V F F I V =40V - 20 120 A R1 R (1) Reverse current I V =45V - 35 200 A R2 R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 0.78 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 0.44 /W (1) (3) R Thermal Resistance (Junction to ambient) JA - - 55 /W Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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