Schottky Barrier Diode RBQ30T65ANZ Datasheet Applications Dimensions (Unit : mm) Structure Switching power supply 3.20.2 Features Power mold type (TO-220FN) 1) (1) (2) (3) Anode Cathode Anode 2) Cathode common dual type 3) High reliability Low I 4) R ROHM : : TO-220FN : Manufacture date Construction Silicon epitaxial planar type Packing Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 65 Repetitive peak reverse voltage V RM V Direct Reverse Voltage 65 Reverse voltage V R 60Hz half sin wave, resistive load, I Average forward rectified current 30 A o I /2 per diode, T = 80C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive forward current surge peak I 100 A FSM T =25C, 1cycle, per diode a Operating junction temperature T - 150 C j T Storage temperature - 55 to +150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =15A Forward voltage - 0.64 0.69 V F F I V =60V - 25 120 A R1 R Reverse current =65V I V - 35 200 A R2 R Thermal resistance R Junction to case - - 2 C/W th(j-c) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 1/4 34.5Datasheet RBQ30T65ANZ Electrical Characteristic Curves 100 1000000 T = 150C T = 125C j 100000 j T = 150C j 10000 T = 125C 10 j T = 75C j 1000 100 T = 25C 1 j 10 T = 75C j 1 T = 25C j 0.1 T = 25C 0.1 j 0.01 T = 25C j 0.01 0.001 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 45 50 55 60 65 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10000 1000 T = 25C j f = 1MHz 1000 100 I FSM 8.3 8.3 ms ms 1cyc T =25C a 100 10 0 10 20 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.08 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I ( A) R FORWARD CURRENT : I (A) FSM