Schottky Barrier Diode RBR10T60ANZ Datasheet Application Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common dual type (1) (2) (3) Anode Cathode Anode 2) High reliability 3) Low V F Construction Silicon epitaxial planar type ROHM : TO220FN 1 Manufacture date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive Peak Reverse Voltage Duty0.5 60 V RM V Reverse Voltage Direct Reverse Voltage 60 V R 60Hz half sin Wave, resistive load, Average Forward Rectified Current I 10 A o I /2 per diode, T =130C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive Forward Current Surge Peak I 50 A FSM T =25C, 1cycle, per diode a T Operating Junction Temperature - 150 C j T Storage Temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward Voltage - - 0.65 V F F I V =60V Reverse Current - - 200 A R R R Junction to Case Thermal Resistance -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/4 34.5Datasheet RBR10T60ANZ Electrical Characteristic Curves 100 1000000 100000 T = 150 C j 10 10000 T = 150 C j T = 75 C j 1000 T = 125 C j 1 T = 25 C 100 j T = 125 C j 10 T = 75 C j T = 25 C j 0.1 T = 25 C 1 j T = 25 C 0.1 j 0.01 0.01 0 200 400 600 800 1000 1200 1400 1600 0 10203040 5060 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 40 T = 25 C T=25 C j j 35 I =0.5A f = 1MHz F I =1.0A R 30 I / I =0.25 rr R n=10pcs 25 100 20 Ave. : 10.2ns 15 10 5 10 0 0 102030 REVERSE VOLTAGE : V (V) R t DISPERSION MAP rr V -C CHARACTERISTICS R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t REVERSE RECOVERY TIME : t (ns) REVERSE CURRENT : I ( A) rr R