Schottky Barrier Diode RBR20T40AHZ Datasheet AEC-Q101 Qualified Application Dimensions (Unit : mm) Structure Switching power supply Features (1) (2) (3) Anode Cathode Anode 1) Cathode common dual type 2) High reliability Low V 3) F Construction ROHM : TO220FN Silicon epitaxial planar type 1 Manufacture date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive Peak Reverse Voltage Duty0.5 40 V RM V Reverse Voltage Direct Reverse Voltage 40 V R 60Hz half sin Wave, resistive load, Average Forward Rectified Current I 20 A o I /2 per diode, T =120C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive Forward Current Surge Peak I 100 A FSM T =25C, 1cycle, per diode a T Operating Junction Temperature - 150 C j T Storage Temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit V I =10A Forward Voltage - - 0.62 V F F I V =40V Reverse Current - - 240 A R R R Junction to Case Thermal Resistance -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/5 34.5Datasheet RBR20T40AHZ Electrical Characteristic Curves 100 100000 T = 150 C j 10000 10 T = 150 C j T = 75 C j T = 125 C 1000 j T = 125 C j T = 25 C j 1 100 T = 75 C j 10 T = 25 C j T = 25 C 0.1 j 1 T = 25 C j 0.01 0.1 0 200 400 600 800 010 20 30 40 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 600 T=25 C T=25 C j j V =40V R I =10A F 80 n=30pcs 580 n=30pcs Ave. : 45.0 A 560 60 540 40 Ave. : 517mV 20 520 0 500 I DISPERSION MAP V DISPERSION MAP R F www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/5 FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F F REVERSE CURRENT : I ( A) REVERSE CURRENT : I ( A) R R