Schottky Barrier Diode RBR30T30ANZ Datasheet Application Dimensions (Unit : mm) Structure General rectification Features (1) (2) (3) Anode Cathode Anode 1) Cathode common dual type 2) High reliability Low V 3) F Construction ROHM : TO220FN Silicon epitaxial planar type 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive Peak Reverse Voltage Duty0.5 30 V RM V Reverse Voltage Direct Reverse Voltage 30 V R 60Hz half sin Wave, resistive load, Average Forward Rectified Current I 30 A o I /2 per diode, T =110C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive Forward Current Surge Peak I 100 A FSM T =25C, 1cycle, per diode a T Operating Junction Temperature - 150 C j T Storage Temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit V I =15A Forward Voltage - - 0.55 V F F I V =30V Reverse Current - - 300 A R R R Junction to Case Thermal Resistance -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/5 34.5Datasheet RBR30T30ANZ Electrical Characteristic Curves 1000000 100 T = 150 C T = 125 C j j 100000 T = 150 C j T = 125 C T = 75 C j 10000 10 j 1000 T = 25 C j 1 100 T = 75 C j 10 T = 25 C T = 25 C j j 0.1 1 T = 25 C j 0.1 0.01 0.01 0 100 200 300 400 500 600 700 800 010 20 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 520 300 T=25 C T=25 C j j V =30V I =15A R F 250 510 n=30pcs n=30pcs 200 500 Ave. : 489mV 150 Ave. : 89.0 A 490 100 480 50 470 0 V DISPERSION MAP I DISPERSION MAP F R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/5 FORWARD VOLTAGE : V (mV) F FORWARD CURRENT : I (A) F REVERSE CURRENT : I ( A) REVERSE CURRENT : I ( A) R R