Schottky Barrier Diode RBR30T40ANZ Datasheet Application Dimensions (Unit : mm) Structure General rectification Features (1) (2) (3) Anode Cathode Anode 1) Cathode common dual type 2) High reliability Low V 3) F Construction ROHM : TO220FN Silicon epitaxial planar type 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive Peak Reverse Voltage Duty0.5 40 V RM V Reverse Voltage Direct Reverse Voltage 40 V R 60Hz half sin Wave, resistive load, Average Forward Rectified Current I 30 A o I /2 per diode, T =95C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive Forward Current Surge Peak I 100 A FSM T =25C, 1cycle, per diode a T Operating Junction Temperature - 150 C j T Storage Temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit V I =15A Forward Voltage - - 0.62 V F F I V =40V Reverse Current - - 360 A R R R Junction to Case Thermal Resistance -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/5 34.5Datasheet RBR30T40ANZ Electrical Characteristic Curves 100 1000000 T = 150 C T = 125 C j j 100000 T = 150 C j 10 10000 T = 75 C j T = 125 C j 1000 1 T = 25 C j 100 T = 75 C j 10 T = 25 C j 0.1 T = 25 C j 1 T = 25 C j 0.01 0.1 0 200 400 600 800 0 1020 3040 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 130 650 T=25 C T=25 C j j 640 120 V =40V R I =15A F n=30pcs 630 110 n=30pcs 620 100 610 90 600 80 Ave. : 58.0 A 590 70 Ave. : 564mV 60 580 50 570 40 560 30 550 V DISPERSION MAP I DISPERSION MAP F R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/5 FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F F REVERSE CURRENT : I ( A) R REVERSE CURRENT : I ( A) R