RF071L4STFTE25 ROHM

Data Sheet Super Fast Recovery Diode RF071L4S Series Dimensions(Unit : mm) Land size figure(Unit : mm) Standard Fast Recovery 2.0 Applications General rectification PMDS Features Structure 1)Small power mold type.(PMDS) 2)high switching speed 3)Low forward voltage Construction Taping dimensions(Unit : mm) 2.00.05 Silicon epitaxial planer 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings(Tl=25 C) Parameter Conditions Limits Unit Symbol Repetitive peak reverse voltage V D0.5 400 V RM Reverse voltage V Direct voltage 400 V R Glass epoxy substrate mounted 1A Average rectified forward current Io Tl=120C 60Hz half sin wave, Non-repetitive Forward current surge peak I 15 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature 55 to 150 C Tstg Electrical characteristics(Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit Forward voltage V I =0.7A -1 1.25 V F F Reverse current I V =400V - 0.01 10 A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I -20 25 ns F R R -- 23 Thermal resistance Rth(j-l) junction to lead C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.A 1/3 5.30.1 2.0 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2RF071L4S Data Sheet Electrical characteristics curves 10 1000 100 f=1MHz Tj=125C 1 100 Tj=150C Tj=150C Tj=125C 0.1 10 10 Tj=25C Tj=75C Tj=75 C 0.01 1 Tj=25 C 0.001 0.1 1 0 500 1000 1500 2000 0 100 200 300 400 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 1100 40 10 I =0.7A F Tj=25C f=1MHz Tj=25 C V =400V V =0V R R n=30pcs n=30pcs 1050 Tj=25C 30 AVE : 29.2pF AVE : 4.2nA 1000 1 20 950 AVE : 980.8mV 10 0.1 900 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 80 30 I =0.5A F Ifsm 1cyc 25 I =1A Ifsm R Irr=0.25*I 60 R 8.3ms Tj=25 C 100 8.3ms 8.3ms 20 1cyc 40 15 AVE : 20.1ns AVE : 41.2A 10 10 20 5 1 0 0 110 100 trr DISPERSION MAP I DISRESION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 30 100 1000 IM=10mA I =100mA F Rth(j-a) 25 time 1ms 100 300 s 20 AVE : 14.1kV 10 15 10 Rth(j-l) Ifsm 10 t 1 AVE : 3.40kV 5 On Glass Epoxi Board 1 0 0.1 110 100 C=200pF C=100pF 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FORWARD VOLTAGE : V (mV) FSM FORWARD CURRENT : I (A) F FSM FORWARD CURRENT : I (A) F ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) REVERSE CURRENT : I (nA) R PEAK SURGE CAPACITANCE BETWEEN TERMINALS : CAPACITANCE BETWEEN TERMINALS : TRANSIENT FORWARD CURRENT : I (A) FSM Ct(pF) Ct(pF) THAERMAL IMPEDANCE : Rth (C/W)