X-On Electronics has gained recognition as a prominent supplier of RFN10BGE3STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN10BGE3STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN10BGE3STL ROHM

RFN10BGE3STL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RFN10BGE3STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SIC FAST RECOVERY DIODE TO-252
Datasheet: RFN10BGE3STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0879 ea
Line Total: USD 1.09

Availability - 2425
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1277
Ship by Fri. 02 Aug to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0879
10 : USD 0.8809
100 : USD 0.7073
500 : USD 0.6291
1000 : USD 0.5267
2500 : USD 0.5026
5000 : USD 0.5026
10000 : USD 0.483

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
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We are delighted to provide the RFN10BGE3STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN10BGE3STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN10BGE3S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 General rectification TO-252 2.3 2.3 Features Structure Cathode ROHM : TO-252GE 1) Low switching loss JEITA : - 2) High current overload capacity Anode Anode Taping specifications (Unit : mm) Construction Silicon epitaxial planar type Absolute maximum ratings (at T = 25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Duty0.5 350 Repetitive peak reverse voltage V RM V Reverse voltage Reverse direct voltage 350 V R 60Hz half sin waveform, I Average rectified foward current 10 A o resistive load, T =34CMax c 60Hz half sin waveform, Peak forward surge current I 80 A FSM non-repetitive, 1-3 pin common circuit, T=25C j T Junction temperature - 150 C j Storage temperature T - 55 150 C stg Electrical characteristics (at T = 25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A Forward voltage - 1.25 1.50 V F F I V =350V Reverse current -- 10 R A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 22 30 ns F R R (1) R Junction to case -- 6 C / W Thermal resistance th(j-c) (1) Value is guaranteed by design www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12_Rev.001 1/4 3.0 2.0 6.0Datasheet RFN10BGE3S Electrical characteristic curves 100000 100 T = 150C j T = 125C j 10000 10 1000 T = 75C j T = 150C j 100 1 T = 25C j T = 125C j 10 T = 75C j 0.1 1 T = 25C j 1-3pin common 0.1 0.01 0 50 100 150 200 250 300 350 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25C f = 1MHz j T = 25C 1-3pin common a 100 100 10 10 I FSM 8.3ms 8.3ms 1cyc. 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2020 ROHM Co., Ltd. All rights reserved. 2020/03/12_Rev.001 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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